Allicdata Part #: | BGM7LMHM4L12E6327XTSA1-ND |
Manufacturer Part#: |
BGM7LMHM4L12E6327XTSA1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Infineon Technologies |
Short Description: | IC AMP MMIC 12ATSLP |
More Detail: | RF Amplifier IC LTE 700MHz ~ 2.7GHz TSLP-12-4 |
DataSheet: | BGM7LMHM4L12E6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
Frequency: | 700MHz ~ 2.7GHz |
P1dB: | -- |
Gain: | 13dB |
Noise Figure: | -- |
RF Type: | LTE |
Voltage - Supply: | 1.5 V ~ 3.3 V |
Current - Supply: | 4.5mA |
Test Frequency: | -- |
Package / Case: | 12-XFQFN Exposed Pad |
Supplier Device Package: | TSLP-12-4 |
Description
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RF amplifiers enable us to satisfy the demands of a number of applications, including military and defense, communications, broadcast, and entertainment. The B9M7LHM4L12E6327XTSA1 is an ultra-broadband power amplifier with robust linearity designed to meet the stringent requirements of many applications, such as amplifying wide frequency band signals or providing high degree of distortion properties.The B9M7LHM4L12E6327XTSA1 operates between 6.3 and 27 GHz frequency range and offers a maximum gain of 15 dB in the 18 to 20 GHz frequency range. It is capable of driving up to 2 W power in the 6 to 14 GHz frequency range and offers a high power gain of 38 dB. This amplifier delivers a wide range of features including low noise figure, excellent linearity, low power consumption, and wide dynamic range.The amplifier operates with a supply voltage of 30V for maximum power output. It also features a built-in temperature compensation circuit for superior input-offset voltage stability. The amplifier utilizes advanced GaN on SiC technology to deliver excellent thermal performance and efficient power utilization. Additionally, the amplifier has an integrated cooling fan that further improves the temperature of the amplifier, as well as its performance.The B9M7LHM4L12E6327XTSA1 utilizes input and output matched directional couplers as well as an inductor-based input matching network for optimized gain and linearity performance. The input matching network is designed to optimize the gain and linearity performance across the entire bandwidth. Furthermore, the amplifier utilizes a multi-stage cross-coupled matching network that optimizes gain over the entire bandwidth while maximizing the linearity performance.The amplifier also features a low-power design to minimize power consumption and improve thermal management. The amplifier is equipped with an output resistive voltage limiter to ensure safe operation in the event of high input power and further prevents catastrophic device failure due to input overload. The amplifier also features a wide operating temperature range of -40 to +85 degree Celsius, allowing for operation in harsh environmental conditions.In conclusion, the B9M7LHM4L12E6327XTSA1 is an ultra-broadband power amplifier with excellent linearity. It offers excellent performance, features, and low power consumption, allowing for efficient applications in a variety of fields including military, broadcasting, and communications.The specific data is subject to PDF, and the above content is for reference
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