BQ2022DBZR Allicdata Electronics

BQ2022DBZR Integrated Circuits (ICs)

Allicdata Part #:

296-16825-2-ND

Manufacturer Part#:

BQ2022DBZR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC EPROM 1K SINGLE WIRE SOT23-3
More Detail: EPROM - OTP Memory IC 1Kb (256b x 4 pages) Single ...
DataSheet: BQ2022DBZR datasheetBQ2022DBZR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Kb (256b x 4 pages)
Write Cycle Time - Word, Page: --
Memory Interface: Single Wire
Voltage - Supply: 2.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BQ2022
Description

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The BQ2022DBZR is a 2-wire serial EEPROM, battery backup/monitor, and real-time clock semiconductor device manufactured by Texas Instruments. It was designed for use in a wide range of applications, including memory and backup for cell phones, embedded systems, automotive electronics, and more. This article will discuss the application field and working principle of the BQ2022DBZR, how it can be used in memory applications, and how it works from a technical standpoint.

The application field of the BQ2022DBZR is wide due to its low power consumption, versatility, and compact size. It is often used in portable devices, where space, power usage, and weight are critical factors. In automotive electronics, for example, it is used in systems such as dashboard navigation systems and engine control modules that require extreme miniaturization. It is also used in medical devices, industrial machinery, and military applications. Its low power consumption ensures that it can withstand even the harshest environmental conditions.

In terms of its working principle and use in memory applications, the BQ2022DBZR operates and functions similarly to a typical EEPROM. In an EEPROM, data is temporarily stored in individual electrically-erasable and programmable memory cells, which can be written and erased quickly. The BQ2022DBZR works similarly, with a low voltage write voltage, a high voltage erase voltage, and a write-inhibit mode for improved data integrity. The storage capacity of the BQ2022DBZR is up to 2048 bits, which is enough for most memory applications.

In terms of its technical workings, the BQ2022DBZR functions as a serial interface, clocking signals in and out of a designated EEPROM through its two I/O pins. This is done through a master-slave architecture, where the master device serves as the controller to read and write data and the slave device serves as the interface between the memory cells. When a write command is sent to the EEPROM, the data is clocked into the desired location within the EEPROM and then stored by activating the write-inhibit mode. The data is then read by sending out a read command, after which the data is clocked out and sent to the controller.

Overall, the BQ2022DBZR is a versatile and compact EEPROM with a wide array of applications in memory. Its low power consumption and versatile design make it perfect for use in a variety of environments, from automotive electronics to medical devices, embedded systems, and more. Its master-slave architecture allows it to quickly and reliably read and write data, making it an invaluable component for memory applications.

The specific data is subject to PDF, and the above content is for reference

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