BR24C32-MN6TP Allicdata Electronics
Allicdata Part #:

BR24C32-MN6TP-ND

Manufacturer Part#:

BR24C32-MN6TP

Price: $ 0.43
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 32K I2C 400KHZ 8SO
More Detail: EEPROM Memory IC 32Kb (4K x 8) I²C 400kHz 8-SO
DataSheet: BR24C32-MN6TP datasheetBR24C32-MN6TP Datasheet/PDF
Quantity: 1000
2500 +: $ 0.39922
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: BR24C32
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BR24C32-MN6TP is a ferroelectric random access memory that provides a non-volatile, fast and security performance for applications, such as static and dynamic system information storage, data backup, parameter settings and log recording. It is a multipurpose device suitable for use in a wide variety of application fields.

The BR24C32-MN6TP is a 2Kb ferroelectric random access memory that offers fast non-volatile performance and improved reliability. It has four memory banks, each consisting of 512 words, allowing for faster operation in multiple applications. It uses ferroelectrics as the storage element, which offers high-speed access, low power consumption and data stability during standby. The device also offers improved security with its multilayered memory architecture and multiple protection modes. Additionally, the BR24C32-MN6TP is capable of operating in a wide range of temperature conditions ranging from -40°C to +125°C.

The working principle of the BR24C32-MN6TP is based on the principle of ferroelectricity. A ferroelectric material is one which has a polarized electric field and a net electric dipole. The electric field can be changed by an applied electric field, and the dipole can be reoriented in the proper direction by the application of an applied electric field. The BR24C32-MN6TP is designed to operate by using this principle. When a voltage is applied to the bit lines, the ferroelectric capacitor will switch from a low potential to a high potential. When the potential is high, a bit is “written” in a particular cell, when the potential is low, a bit is “erased” in that cell. The BR24C32-MN6TP is capable of switching between voltages very rapidly, which makes it ideal for applications that require quick access and data storage.

The BR24C32-MN6TP is an ideal solution for a wide range of applications, including automotive, industrial, medical, energy and aerospace. It offers reliable and robust non-volatile performance in harsh ambient temperatures, and its fast access times make it well suited for use in embedded memory applications.

In summary, the BR24C32-MN6TP is a reliable, low-power and fast ferroelectric random access memory that provides excellent performance in a wide variety of applications. Its ferroelectric technology offers high-speed access, data stability and improved security, making it a suitable device for numerous applications.

The specific data is subject to PDF, and the above content is for reference

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