BR24G04-3

Scientific advancements have enabled us to invent and create many fantastic and ever-evolving pieces of technology. Memory is certainly one of the most crucial forms of technology, and the BR24G04-3 is just one example of how memory capabilities have evolved. This article will delve into an explanation of the application field and working principle of the BR24G04-3.

Application field:

The BR24G04-3 is a type of non-volatile memory (NVM) manufactured by Alliance Memory. It is a quad-die 16bit parallel NOR flash memory device, designed with a 3.3V supply voltage and high speed performance. The device is built using standard CMOS technology, which makes it capable of supporting various advanced features, as well as being reliable and robust. It is specifically designed for automotive and industrial embedded applications - where temperature, vibration, and power consumption are key issues.

The BR24G04-3 is ideal for applications that require an embedded NVM solution with a high memory density and low power consumption. It is capable of storing large amounts of data, and can be used in a wide range of different applications. It is an ideal solution for automotive, industrial, medical, and security embedded applications that require reliable and robust NVM.

Working Principle:

The BR24G04-3 relies on a 4-cell structure and a charge trapping mechanism, allowing for increased storage density. Each cell consists of two transistors and a single floating gate, where the charge is stored. When a voltage is applied to the floating gate, the trapped charge generates a potential difference between it and the control gate. The trapped charge retains info even when the power is off, making the BR24G04-3 a non-volatile memory.

The device uses an array of row and column circuits and a single data line to access memory. The row circuitry is used to select the word line, while the column circuitry selects the bit line. When a valid memory address is provided, the row and column circuits open a connection between the data line and the cells in the matrix. The valid data is read out from the selected cells.

To write data to the memory, the circuits reverse the operation. The data is loaded onto the data line and programmed into the selected cells. The whole writing process is completed in only a few microseconds

Conclusion:

The BR24G04-3 memory is a highly advanced and reliable memory device designed for automotive and industrial embedded applications. It uses a non-volatile mechanism, consisting of row and column circuitry and a single data line, to access and manipulate the stored data. It is an ideal solution for applications which require a memory device with high memory density, low power consumption and reliability.