BR35H128F-WCE2 Allicdata Electronics

BR35H128F-WCE2 Integrated Circuits (ICs)

Allicdata Part #:

BR35H128F-WCE2TR-ND

Manufacturer Part#:

BR35H128F-WCE2

Price: $ 1.18
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 128K SPI 5MHZ 8SOP
More Detail: EEPROM Memory IC 128Kb (16K x 8) SPI 5MHz 8-SOP
DataSheet: BR35H128F-WCE2 datasheetBR35H128F-WCE2 Datasheet/PDF
Quantity: 2500
1 +: $ 1.18000
10 +: $ 1.14460
100 +: $ 1.12100
1000 +: $ 1.09740
10000 +: $ 1.06200
Stock 2500Can Ship Immediately
$ 1.18
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Description

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Memory is essential for the functioning of today\'s electronics. It is used in a wide variety of applications including computers, smartphones and other embedded systems. The BR35H128F-WCE2 is one such example of a memory used in such applications. This article will discuss the application field and working principle of the BR35H128F-WCE2.

Applications

The BR35H128F-WCE2 is a Flash memory device designed for use in high-performance, high-capacity applications. It is designed to deliver superior performance and reliability in a wide range of applications. These applications include automotive and industrial IoT, networking and telecom, consumer electronics, embedded systems, and more.

The BR35H128F-WCE2 is a high-density memory device, with a capacity of up to 128 megabits (Mb). Its small form factor and low-power consumption make it suitable for battery powered applications such as wearables. Its superior speed and power efficiency make it well-suited for applications that require large amounts of data to be processed quickly.

The BR35H128F-WCE2 is highly reliable, with a mean time between failures (MTBF) of 1.7 billion hours. This makes it suitable for mission-critical systems and applications with stringent reliability requirements. It is also available in a wide range of temperature grades, with options for extended temperature, low temperature and industrial grades.

Working Principle

The BR35H128F-WCE2 is a Flash memory device, which is a type of non-volatile memory. This means that it can store data even when there is no power. The chip is made up of arrays of floating gate transistors which act as memory cells. These cells can be programmed and erased to store data.

The device is optimized for high-speed operation, with program and erase speeds up to 4.5Mbits/s. It is also designed for low-power operation, with standby and active modes optimized for maximum efficiency. The device includes error-correction circuitry, with a programmable bit error rate (BER) of up to 1 in 1012. This allows for reliable data storage and retrieval, even in extreme conditions.

The BR35H128F-WCE2 is a highly reliable and versatile memory device, suitable for a wide range of applications. Its superior performance, reliability and low-power consumption make it an ideal choice for high-performance, high-capacity applications. It is an excellent choice for mission-critical systems and applications requiring high speeds and low power.

The specific data is subject to PDF, and the above content is for reference

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