BSM400GA120DN2HOSA1

Series:	--
Part Status:	Not For New Designs
IGBT Type:	--
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	550A
Power - Max:	2700W
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 400A
Current - Collector Cutoff (Max):	8mA
Input Capacitance (Cies) @ Vce:	26nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction of BSM400GA120DN2HOSA1

BSM400GA120DN2HOSA1 is a module developed by Infineon. It is a 1200V/400A insulated gate bipolar transistor (IGBT) module. This mode is designed for high-current, high-frequency and high-efficiency power conversion solutions. It belongs to the IGBT module family of transistors, and it works on the principle of a voltage-controlled switching device.

Application Field of BSM400GA120DN2HOSA1

BSM400GA120DN2HOSA1 IGBT module can be used in a variety of different applications. It is commonly used in welding robots, plasma cutting, three phase rectifier, motor controllers, power conversion systems, telecommunications and Power Inverters applications. It is also used in automotive applications in electric and hybrid vehicles such as traction inverters, converter gate drive, starter generators and charging applications.

Working Principle of BSM400GA120DN2HOSA1

BSM400GA120DN2HOSA1is an IGBT module and works on the principle of a voltage-controlled switching device. When a voltage is applied to the gate terminal of the module, it creates an electric field which induces current through the device and switches on the transistor. When the gate voltage is removed, the device switches off. This switching action is used to control the amount of current flowing through the transistor, which can be done very quickly and efficiently.The IGBT module also has several built-in safety features such as over-temperature protection, short-circuit protection, and reverse-voltage protection which help protect the device from damage.

Advantages of BSM400GA120DN2HOSA1

BSM400GA120DN2HOSA1 offers many advantages including high frequency range, low on-state resistance, and low operating temperature. The IGBT module also has high power efficiency and low switching losses, which make it suitable for power conversion applications with high frequency. Additionally, the IGBT module is suitable for operations in high temperature environments, and its integrated safety features provide additional protection from thermal and electrical damage.

Conclusion

BSM400GA120DN2HOSA1 is an IGBT module developed by Infineon. It is suitable for applications such as welding robots, power conversion systems, and electric and hybrid vehicles. Besides, the device also has a high frequency range, low on-state resistance, and low operating temperature. Furthermore, it has high power efficiency and integrated safety features, thus offering excellent protection from thermal and electrical damage.

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