BSM400GA170DLCHOSA1 Allicdata Electronics
Allicdata Part #:

BSM400GA170DLCHOSA1-ND

Manufacturer Part#:

BSM400GA170DLCHOSA1

Price: $ 165.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 2 MED POWER 62MM-2
More Detail: IGBT Module Single 1700V 800A 3120W Chassis Mount...
DataSheet: BSM400GA170DLCHOSA1 datasheetBSM400GA170DLCHOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 150.85800
Stock 1000Can Ship Immediately
$ 165.95
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 800A
Power - Max: 3120W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 400A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 29nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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BSM400GA170DLCHOSA1 Application Field and Working Principle

Introduction

The BSM400GA170DLCHOSA1 is an insulated gate bipolar transistor (IGBT) module. It is a kind of combination of IGBT and diode, with both the switching functions of MOSFET and the fast switching speed of bipolar transistor. This module can provide output current of 400A and blocking voltage of 1700Vct. Its high-current carrying capacity and low loss makes it ideal for traction inverters, UPS, wind and solar energy systems, traction converters, and various motors.

Basic Principles

The working voltage of the BSM400GA170DLCHOSA1 module is based on the principle of PN junction. This junction is formed by connecting two P-type and N-type semiconductors. In the working circuit, when the bias voltage is applied, the electric field generated will move electrons from the n type side to the p type side to form a space charge layer at the junction when electrons and holes combine; and these charges can form an electric current. In this process, the electrons present on the p-type side will become excess and cause the p-type semiconductor to become positively charged and the n-type semiconductor to be negatively charged. As a result, an electric field will be formed. This electric field will repel any negative charges that enter the junction, and attract any positive charges that enter the junction, creating a semiconductor diode.

Application Field

The BSM400GA170DLCHOSA1 module has the following application demands:

  • UPS: The module can provide fast switching speed and its stable operation can ensure better safety for the entire UPS system.
  • Wind and Solar Energy Systems: It can provide high efficiency, low loss and high start-up current for wind and Solar energy systems.
  • Traction Converters: It can effectively reduce voltage loss in the traction converters thanks to its low loss design.
  • Traction Inverters: It can provide stable current for the traction inverters by effectively reducing output voltage fluctuation.
  • Various Motors: Its high current carrying capacity can provide stable operation for various motors.

Conclusion

The BSM400GA170DLCHOSA1 is a high performance IGBT module that is suitable for various applications. It has a high current carrying capacity and low loss design, which makes it ideal for using in traction control systems, UPSs, wind and solar energy systems, and various motors. In addition, its fast switching speed can provide higher efficiency and lower voltage loss. Overall, the BSM400GA170DLCHOSA1 is a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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