
Allicdata Part #: | BSP52T1OSCT-ND |
Manufacturer Part#: |
BSP52T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 80V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 1A ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.3V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 500mA, 10V |
Power - Max: | 800mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BSP52 |
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BSP52T1 transistors are single, bipolar junction transistors (BJT) used to amplify electrical signals with minimal distortion or unwanted noise. In terms of applications, the BSP52T1 transistor is often used in the power supply circuits of electronic devices such as TVs, computers, and audio systems, as well as in medical equipment, automotive systems and other small applications with low-power requirements. The BSP52T1 transistor has a number of characteristics that make it ideal for a variety of applications.
The BSP52T1 transistor is a general-purpose transistor and is usually applied in a “common emitter” configuration, although some configurations are also possible. The maximum voltage that can be applied to the BSP52T1 transistor is 40V, with the maximum current that can be handled being 1A. It has a continuous collector current of 0.85A, a collector-emitter voltage of 40V, a power dissipation of 500mW, and a dissipation power ratio (PDR) of 1. Its junction temperature range is -65°C to + 125°C and its storage temperature range is -65°C to + 150°C. Additionally, the BSP52T1 transistor has an insulation resistance of >1 x 10E 12 Ohm and a highly reliable silicon nitride passivation system.
The BSP52T1\'s operating principle is based on minority carrier injection in junction after appropriate biasing will cause current to flow through the channel. The minority carrier injection is dependent on the orientation of the transistor and the applied voltage. When a voltage is applied between the BSP52T1\'s base and emitter, minority carriers are injected into the base-collector junction. This will cause current to flow through the base-collector junction, which is proportional to the amount of voltage applied. The BSP52T1 is a unipolar transistor and can therefore amplify both AC and DC signals with minimal distortion or unwanted noise.
In summary, the BSP52T1 is a single, bipolar junction transistor (BJT) designed for low-power applications such as power supply circuits, medical equipment, automotive systems and other small applications. Its wide range of characteristics, including a maximum voltage of 40V, a maximum current of 1A, and a high insulation resistance, make it ideal for use in a variety of applications. Additionally, The BSP52T1 transistor operates on the principle of minority carrier injection and is capable of amplifying both AC and DC signals with minimal distortion or noise.
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