| Allicdata Part #: | BSPH2A150D150LV-ND |
| Manufacturer Part#: |
BSPH2A150D150LV |
| Price: | $ 91.94 |
| Product Category: | Circuit Protection |
| Manufacturer: | Eaton |
| Short Description: | 150V HYBRID DIN LV SPD |
| More Detail: | N/A |
| DataSheet: |  BSPH2A150D150LV Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 1 +: | $ 83.57580 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| Voltage - Clamping: | -- |
| Technology: | GDT, MOV |
| Number of Circuits: | 2 |
| Applications: | General Purpose |
| Mounting Type: | DIN Rail |
| Package / Case: | Module |
| Supplier Device Package: | Module |
Description
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TVS - Mixed Technology involves combining two or more technologies together to produce a more efficient and reliable product. The BSPH2A150D150LV is a perfect example of just such an application. It is an avalanche diode that features the combination of an insulated-gate bipolar transistor (IGBT) and a PIN diode both embedded in a single package.The BSPH2A150D150LV is used in many applications such as automotive, industrial, and telecom applications. It is particularly suited for high-speed protection circuits with switching frequencies up to 2.0 MHz and offers excellent protection performance.This avalanche diode\'s main purpose is to protect ICs and other electronic devices from electrical overstress due to voltage spikes. It offers superior performance over unidirectional bipolar transistors, because it has a fast switching speed, low on resistance, and can dissipate very high levels of power.The main working principle of the BSPH2A150D150LV is based on the phenomenon of avalanche breakdown. This occurs when the device is exposed to a high enough voltage, creating a current path through the device and allowing it to conduct. This sudden increase in current will then cause the device to quickly switch to a low-resistance state, allowing it to dissipate the excess energy. This helps protect the device and avoid damage from transient overvoltages.The avalanche diode also works by absorbing energy after the transient has passed. This process is called "clamping" and is achieved by the diode\'s internal structure, which consists of a substrate material (silicon) beneath a heavily doped p+ layer. When a voltage spike occurs, the p+ region quickly depletes and becomes a high-resistance layer, allowing the energy to be absorbed and dissipated.This protection feature is especially useful in automotive applications such as voltage solenoid circuits and power door locks, where it can provide reliable voltage protection.The BSPH2A150D150LV is a highly efficient and reliable device that offers superior protection against transient overvoltages and is suited for a variety of applications. It combines the advantages of both IGBT and PIN diode technology into one single package, allowing it to be used in even the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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