Allicdata Part #: | 1727-5500-2-ND |
Manufacturer Part#: |
BST62,115 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP DARL 80V 1A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 80V 1A 2... |
DataSheet: | BST62,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.17252 |
2000 +: | $ 0.15635 |
5000 +: | $ 0.14556 |
10000 +: | $ 0.14377 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.3V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 500mA, 10V |
Power - Max: | 1.3W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | BST62 |
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BST62,115 transistors, of the type "Bipolar (BJT) - Single", are a type of transistor that has many uses in a variety of applications. In this article, we will discuss the application fields and working principles of the BST62,115.
Types of Transistors
Transistors are electrical components that are used to control current flow in electronic circuits. They come in two main types; those that are base-collector oriented like BJT transistors, and those that are drain-source oriented like field effect transistors (FET). In BJT transistors, the base-collector junction is "forward-biased" which creates an open channel for electrons to pass through. In FET transistors, there is an electric field between the drain and source which opens or closes depending on the gate voltage.
BST62,115 Transistor
The BST62,115 transistor is of the type "Bipolar (BJT) - Single". It has a maximum collector-emitter voltage (Vce) of 300 V and a maximum collector dissipation (Pc) of 30 W. The collector-emitter saturation voltage (Vce(sat)) is typically 0.2 V and the base-collector junction is typically 40 V. The transistor has a good high-frequency response as the cut-off frequency (fT) is typically 300 MHz. The maximum collector current (Ic) of the BST62,115 is 2 A.
Application Fields
The BST62,115 transistor has a variety of applications in many different fields. It is widely used in power supply circuits and high-frequency applications. For example, it is often used in power amplifiers, motor control circuits, and switching regulators. The high-frequency response and tight saturation voltage make it well-suited for RF power amplifiers and low-noise amplifiers. The high collector current makes it ideal for high-density switching applications.
Working Principle
The working principle of the BST62,115 transistor is based on the operation of bipolar transistors. The base-collector junction is forward-biased and the base-emitter junction is reverse-biased. The forward-biased junction creates a channel from the collector to the emitter which allows current to pass through when a transistor is “on”. The transistor is “off” when the base-emitter junction is reversed-biased which effectively blocks the current.
Conclusion
The BST62,115 transistor is a type of "Bipolar (BJT) - Single" transistor and has a variety of applications. It is primarily used in power amplifiers, motor control circuits, and switching regulators. The working principle is based on the operation of bipolar transistors, where the forward-biased base-collector junction creates a channel for current to pass through when the transistor is “on”.
The specific data is subject to PDF, and the above content is for reference
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