BSV52LT1 Allicdata Electronics
Allicdata Part #:

BSV52LT1-ND

Manufacturer Part#:

BSV52LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 12V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 12V 100mA 400MHz 225m...
DataSheet: BSV52LT1 datasheetBSV52LT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BSV52
Description

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The BSV52LT1 is a single bipolar junction transistor (BJT) that is commonly used in a wide range of applications. It is a versatile device that is ideal for sensitive analog switching and amplifier applications, such as audio amplifiers. The BSV52LT1 has a high current gain, low noise, and high breakdown voltage. It is a robust, reliable, and low-cost device that offers excellent performance, making it a very popular choice for many electronic products.

The BSV52LT1 is a typically shaped transistor, which is configured in a three-terminal structure. The three terminals consist of the base, collector, and emitter pins. The base pin is the most important transistor terminal and it is used to control the current flowing between the collector and emitter terminals. The collector and emitter terminals, in turn, are used to provide and draw current from the device. To use the BSV52LT1, the base voltage needs to be provided from an external source.

The BSV52LT1 can be used for both switching and amplifying purposes. It can be used as a switch in a variety of switching circuits, like voltage regulators, high-current switch, speed control circuits, etc. It can also be used as an amplifier in audio amplifiers and power amplifiers.

In terms of its working principle, the BSV52LT1 operates similarly to other BJTs. In an NPN BJT configuration, when the base pin is given a positive voltage, current will flow from the emitter to the collector. This current is limited by the current gain, which is the current ratio between the collector and emitter terminals. The higher the current gain, the more current will flow into the collector terminal.

The BSV52LT1 is known for its high breakdown voltage. This voltage is specified for the device, and it is important for controlling the device’s current flow. When the voltage applied to the device reaches or exceeds the breakdown voltage, it will cause the device to breakdown and will rupture the collector-base or emitter-base junctions, resulting in a short circuit. The breakdown voltage of the BSV52LT1 is typically around 100V.

Aside from its use in analog switching and amplifier applications, the BSV52LT1 can also be used in automotive electronics, home theater systems, electronic gaming systems, and more. It is also commonly used in general power switching.

In summary, the BSV52LT1 is a versatile, reliable, and cost-effective single bipolar junction transistor that is suitable for a wide range of applications. It has high current gain, low noise, and a high breakdown voltage. It can be used for both switching and amplifying purposes and it is a popular choice among many electronic products.

The specific data is subject to PDF, and the above content is for reference

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