BT258X-800R,127 Allicdata Electronics
Allicdata Part #:

BT258X-800R,127-ND

Manufacturer Part#:

BT258X-800R,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: THYRISTOR 800V 8A SOT186A
More Detail: SCR 800V 8A Sensitive Gate Through Hole TO-220-3
DataSheet: BT258X-800R,127 datasheetBT258X-800R,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Hold (Ih) (Max): 6mA
Base Part Number: BT258
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Current - Non Rep. Surge 50, 60Hz (Itsm): 75A, 82A
Current - Off State (Max): 500µA
Series: --
Current - On State (It (RMS)) (Max): 8A
Current - On State (It (AV)) (Max): 5A
Voltage - On State (Vtm) (Max): 1.6V
Current - Gate Trigger (Igt) (Max): 200µA
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Voltage - Off State: 800V
Part Status: Active
Packaging: Tube 
Description

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Thyristors are a type of Power electronic semiconductor device in which current or voltage can be turned off quickly when required.They are silicon-controlled rectifiers and can be used in several applications like: power-swing controlled rectification, high-frequency switching, power switching, and semiconductor device protection. Specifically, this article evaluates the BT258X-800R, 127 – a Thyristor, specifically a SCR.

The BT258X-800R, 127 is a two-quadrant silicon-controlled rectifier that can be used in either negative and positive alternates. It is also known as a 180A single-phase solid state relay and has a dissipation of 800V. The BT258X-800R, 127 has a Gate trigger voltage of 1.2V, an Off-State Volts of -800V, and an On-State Current of 180A. This makes it an ideal choice for many applications, including higher power rating, controlling high voltage and voltage inverters.

The primary application field of the BT258X-800R, 127 is in high-frequency switching and semiconductor device protection. It can be used in applications where high voltage and current levels have to be switched rapidly and the power dissipation is controlled. It is also used in power-swing controlled rectification and in voltage inverters. It can be used in circuits that require fast switching operations, as well as those requiring high voltage and power dissipation levels.

The working principle of the BT258X-800R, 127 is based on the use of a gate control resistor. When a control voltage is applied to the gate, the thyristor is switched on. It is then able to process high-frequency pulses, allowing it to be used in applications that require high-frequency switching. The internal resistance of the device increases when the gate voltage is lowered, allowing for higher voltage output and less power dissipation. When the control voltage is removed, the thyristor is switched off.

The BT258X-800R, 127 is well suited for applications requiring high voltage, power dissipation levels, and rapid switching operations. It is suitable for use in switching and controlling high voltage and current levels. Furthermore, its gate trigger voltage is slightly above the depletion voltage, making it ideal for applications involving semiconductor protective relays and power inverter control.

In summary, the BT258X-800R, 127 is a Thyristor, specifically a SCR, well-suited for applications requiring high voltage, power dissipation levels and rapid switching operations. It is suitable for use in switching and controlling high voltage and current levels. Its gate trigger voltage is slightly above the depletion voltage, making it ideal for applications involving semiconductor protective relays and power inverter control.

The specific data is subject to PDF, and the above content is for reference

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