Allicdata Part #: | BU323Z-ND |
Manufacturer Part#: |
BU323Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 350V 10A TO-218 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 350V 10A... |
DataSheet: | BU323Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 250mA, 10A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 5A, 4.6V |
Power - Max: | 150W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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The BU323Z is a high-performance, high-powered, general purpose, TO-220 packaged, n-channel power MOSFET. It is one of the most widely used power MOSFETs in the world. Its unique design allows it to be used in a multitude of applications, ranging from high-end home appliances to industrial equipment. Its fast switching speed and low power dissipation make it one of the most efficient MOSFETs available. It is also highly tolerant to extreme environmental conditions such as high voltage and temperature ranges, as well as wide variations in supply voltage.
The BU323Z is suitable for use as an amplifier and switch in audio systems, switching power supplies, and motor control circuits. It has excellent current handling capability, low operating voltage and low on-resistance. Consequently, it is recommended for both low-power and high-power applications, such as DC-DC converters, class-D audio amplifiers, power supplies, and motor control circuits.
The BU323Z is an n-channel enhancement mode power MOSFET. It has a gate-source voltage of ± 4V, a drain source voltage of 40V, and an absolute maximum drain current of 10A. Its gate-source capacitance is 8pF and the maximum gate voltage is ± 20V. The package contains JEDEC TO-220 with a mounting hole, a drain pin, and a source pin.
The BU323Z operates by using the principle of electrons tunneling through a thin, conducting barrier between the source and drain terminals of the MOSFET. This process, referred to as “gate-source conduction”, occurs when a voltage is applied between the gate and source terminals. The voltage applied results in a field gradient between the gate and source, which causes electrons to be repelled from the drain, thus forming an inversion layer beneath the gate. Due to this inversion layer, current can now flow from the source to the drain, depending on the voltage applied to the gate.
The BU323Z is an ideal choice for applications requiring high switching speeds and low power dissipation. It has a low gate capacitance and high break-down voltage, making it suitable for applications with high frequencies. It is also capable of dissipating heat quickly, making it suitable for motor control circuits. Its low on-resistance ensures that maximum current can be used in circuit applications, improving the efficiency and reliability of power supplies.
The BU323Z is used in a variety of applications due to its high power dissipation, switching speed, and robust performance. It can be used to control the speed and direction of motors, as well as in switching power supplies, audio systems, TVs, and consumer electronics. It is also used in telecommunication equipment, security systems, and heating and air conditioning systems.
In conclusion, the BU323Z is a high-performance, high-powered, general purpose, TO-220 packaged, n-channel power MOSFET. Its excellent current handling capability, low operating voltage, and low on-resistance make it suitable for a range of applications, including motor control circuits, switching power supplies, audio systems, and consumer electronics. Its fast switching speed and low power dissipation make it one of the most efficient MOSFETs available. It is highly tolerant to extreme environmental conditions such as high voltage and temperature ranges, as well as wide variations in supply voltage.
The specific data is subject to PDF, and the above content is for reference
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