Allicdata Part #: | BU408CS-ND |
Manufacturer Part#: |
BU408 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | THROUGH-HOLE TRANSISTOR BIPOLAR |
More Detail: | Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Thr... |
DataSheet: | BU408 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1.2A, 6A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | 60W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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The BU408 is a high-performance silicon NPN epitaxial-base transistor. It is available in a TO-220 package, and is an excellent choice for medium-power switching and amplifying applications. It is one of the most popular power transistors available, and has a wide range of applications in the fields of switching, regulating, and amplifying.
The BU408 is a single-transistor bipolar junction transistor (BJT). A BJT is a three-terminal solid-state device consisting of two p-type and one n-type semiconductor layers. It works by having current carriers (electrons and holes) flowing through the semiconductor layers under the influence of an applied electric field. This creates a current from the base (input) to the collector (output). This is known as collector-to-base or CB operation, and is the principal way that BJTs are used in switching and amplifying applications.
The BU408 is an ideal choice for medium-power switching and amplifying applications due to its wide operating temperature range, low noise figure, and high current gain. It can be used in a variety of circuit designs to switch and amplify signals, such as audio amplifiers, inverters, voltage regulators, and motor control. It has been used in various power applications, including high-power switching, general-purpose amplification, and logic circuits.
The BU408 has a relatively high maximum collector current (Ic) of up to 50 A. Its high saturated emitter voltage (Vceo) of up to 50V, and its low collector-emitter saturation voltage (Vce(sat)) of up to 0.1V make it suitable for use in switching and regulating circuits. The high voltage and current ratings, combined with its high gain, make this device suitable for use in applications requiring both high efficiency and high performance.
The BU408 is also known for its high frequency response. It is capable of providing high input/output impedance over a range of frequencies, making it suitable for use in high-frequency switching circuits. This high frequency response and low noise figure make it an ideal choice for use in audio amplifiers and other sensitive circuits.
The BU408 has several unique characteristics which make it one of the most popular transistors available. These include its wide operating temperature range, low noise figure, high current gain, and high frequency response. All of these features make the BU408 an excellent choice for medium-power switching and amplifying applications.
The specific data is subject to PDF, and the above content is for reference
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