
Allicdata Part #: | 497-2797-5-ND |
Manufacturer Part#: |
BU931T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN DARL 400V 10A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 400V 10A... |
DataSheet: | ![]() |
Quantity: | 948 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 250mA, 10A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 5A, 10V |
Power - Max: | 125W |
Frequency - Transition: | -- |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | BU931 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BU931T is a bipolar transistor, which contains three terminal sections, a source, a gate and a drain. It is commonly used in various types of digital electronics, including microprocessors and integrated circuit applications. The major application of the BU931T is amplification and switching applications and are particularly well suited for high-speed applications.
This bipolar junction transistor has a metal-oxide semiconductor (MOS) architecture and is very similar in structure to metal-semiconductor field effect transistors (MOSFETs). However, the MOS architecture of the BU931T makes it capable of higher frequencies and lower power consumption than its MOSFET counterparts. The main advantage of the MOS architecture is that it is a self-locking type, meaning that it automatically locks itself in the off state.
The way in which the BU931T works is fairly straightforward. When current flows through the source and drain, it triggers the gate voltage and establishes a stable current through the transistor. This is known as biasing, and the amplifier’s operation is dependent upon it. As current flows through the MOS transistor, the gate voltage is increased and the current is amplified.
The BU931T is able to provide excellent performance in terms of power gain, current gain and noise suppression. It also offers excellent switching characteristics and can operate at higher switching speeds than other types of MOS transistors. Its low-power consumption makes it suitable for battery-powered applications, such as mobile phones and smart cards.
The BU931T is an ideal device for amplifiers and switches. It is particularly useful for switching at high frequencies and making use of the high-speed operation of the MOS architecture. It can also be used in other applications, such as logic gates and buffers. Its versatility and low-power consumption make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BU931 | STMicroelect... | -- | 1000 | TRANS NPN DARL 400V 15A T... |
BU9348K | ROHM Semicon... | -- | 1000 | IC DRAM CONTROLLER QFP44 |
BU931T | STMicroelect... | -- | 948 | TRANS NPN DARL 400V 10A T... |
BU9346K-E2 | ROHM Semicon... | 3.9 $ | 1000 | IC RAM CTLR CD PLAYER QFP |
BU931P | STMicroelect... | -- | 781 | TRANS NPN DARL 400V 15A T... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TRANS PNP 140V 1ABipolar (BJT) Transisto...

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...
