Allicdata Part #: | BUH150-ND |
Manufacturer Part#: |
BUH150 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 700V 15A TO-220AB |
More Detail: | Bipolar (BJT) Transistor NPN 700V 15A 23MHz 150W T... |
DataSheet: | BUH150 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 700V |
Vce Saturation (Max) @ Ib, Ic: | 5V @ 4A, 20A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 10A, 5V |
Power - Max: | 150W |
Frequency - Transition: | 23MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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A BUH150 is a single bipolar junction transistor (BJT) application field and working principle. It is a small-signal transistor that has a low collector-to-emitter voltage drop, low on-resistance, and low gate-to-collector capacitance. The BUH150 is especially designed for very high-speed switching, dual gate logic, and other applications that demand high switching speed and wide frequency range. It is also used in various applications such as power amplifiers, radio frequency amplifiers, and pulse generators.
The working principle of the BUH150 is based on the operation of two pn junctions, or transistor junctions. The two junctions are connected back-to-back and form an “H-bridge”. The current flow through the device is therefore determined by the applied supply voltage and the transistors\' biasing levels. The BUH150 is operated in the enhdowing operating mode where the transistor\'s base-to-emitter junction is forward biased and its collector-to-emitter junction is reverse biased.
In terms of the device\'s output characteristics, it exhibits low on-resistance and high off-resistance. The device also has a high current capacity and good response time. The device is designed for fast, high-current switching, which is why it is suitable for applications such as power amplifiers, radio frequency amplifiers, and pulse generators.
The BUH150 has an inherent temperature stability, which makes it suitable for operations in temperatures ranging from -50°C to +150°C. It is also designed to withstand high voltage transients and is capable of operating in supplied voltages up to 7 volts.
The BUH150 is a reliable, high-performance transistor that provides excellent characteristics for high-speed, low-power switching. It is capable of operating in temperatures ranging from -50°C to +150°C and can withstand high voltage transients. Its low on-resistance, high off-resistance, and high current capacity makes it an ideal choice for applications such as power amplifiers, radio frequency amplifiers, and pulse generators.
The specific data is subject to PDF, and the above content is for reference
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