BUL213

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BUL213 Application Field and Working Principle

The BUL213 is a medium power NPN Transistor designed to be used in applications such as line drivers and power amplifiers, and is classified as a single bipolar junction transistor (BJT). A BJT is an active semiconductor device composed of three layers of semiconductor materials. The use of the BUL213 allows for a higher current or voltage gain than what is available with a BJT with two layers of materials.

Device Structure

Each layer of semiconductor material used to make a BJT is called a “region.” The three regions of a BUL213 are a base, a collector and an emitter. The base and emitter regions are made of n-type material and the collector region is made of p-type material. The N-type material has an excess of negative charge carriers (electrons) and the P-type material has an excess of positive charge carriers (holes). N-type and P-type materials are also called “doped semiconductors” because doping is the process of introducing impurities into the semiconductor material to alter its electrical properties. When a voltage is applied across the collector and emitter regions the electrons and holes in the N-type and P-type materials combine, allowing for current flow. The base region is used to control the flow of current by “biasing” it so that more or less current flows through the device.

Device Characteristics and Symbol

The BUL213 has an amplification factor (A F ) of 200, an on-state resistance of 0.6 Ω and a typical collector-emitter voltage of 50 V. It has a maximum operating frequency of 25 MHz, a maximum collector power dissipation of 4 W and a maximum collector-emitter voltage of 80 V. The device symbol of a BJT looks like an arrow pointing in the direction of the current flow and it includes all the electrical components of the transistor. The arrow is pointing from the collector region to the emitter region and the arrowhead indicates the direction in which the current flows. The base is labelled B, the collector is labelled C and the emitter is labelled E. There are also two lines representing the base and the emitter-collector junctions.The BUL213 transistor has two pins and is used in surface-mount applications. The two pins are labelled C and E, and they connect the collector and emitter regions to the circuit board.

Working Principle

The working principle of a BUL213 is based on the “simple” operation of a BJT. When a voltage is applied to the base of the BUL213, electrons start to move from the n-type emitter region to the p-type collector region. This flow of electrons is called the base current. As more electrons flow across the emitter-collector junction, the voltage at the collector increases. This voltage increase is called the “collector-emitter voltage” and it’s responsible for the amplification of the transistor. The amplification factor (A F ) of the BUL213 de-pends on the base current and is determined by the ratio of the collector current to the base current. The BUL213 has an A F of 200, meaning that for every 1 mA of base current, the collector current is 200 mA.The gain of the BUL213 is determined by the ratio of the collector current to the collector-emitter voltage. This ratio is called the gain-bandwidth-product (GBP) and the gain of the BUL213 is 20 V/mV. This means that for every 1 mV of collector-emitter voltage, the collector current increases by 20 mA.

Applications

The BUL213 is a general purpose medium power NPN transistor used in a wide variety of applications such as line drivers, audio amplifiers, switching circuits and power amplifiers. It is widely used in consumer and industrial applications. The BUL213 is particularly well-suited for applications where a high collector current is required and where the operating voltage is relatively low. It is used in high power systems such as audio amplifiers, industrial motor controls and commercial telecommunications systems.The low on-state resistance of the BUL213 makes it well-suited for high frequency applications because it reduces power dissipation and minimizes switching losses.

Conclusion

The BUL213 is a medium power NPN transistor classified as a single bipolar junction transistor (BJT). The three regions of a BUL213 are a base, a collector and an emitter. The N-type material has an excess of negative charge carriers (electrons) and the P-type material has an excess of positive charge carriers (holes). The device has an amplification factor (A F ) of 200, an on-state resistance of 0.6 Ω and a maximum collector power dissipation of 4 W. The BUL213 is widely used in consumer and industrial applications, such as line drivers, audio amplifiers, switching circuits and power amplifiers. It is particularly well-suited for applications where a high collector current is required and where the operating voltage is relatively low.

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