| Allicdata Part #: | 497-7204-5-ND |
| Manufacturer Part#: |
BUL510 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | TRANS NPN 450V 10A TO-220 |
| More Detail: | Bipolar (BJT) Transistor NPN 450V 10A 100W Throug... |
| DataSheet: | BUL510 Datasheet/PDF |
| Quantity: | 603 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 10A |
| Voltage - Collector Emitter Breakdown (Max): | 450V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1.25A, 5A |
| Current - Collector Cutoff (Max): | 250µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 1A, 5V |
| Power - Max: | 100W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
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BUL510 is a NPN silicon epitaxial transistor often used in driver amplifiers and medium power output stages. It is capable of providing amplification and switching capabilities due to its structure, making it a very versatile component for a multitude of applications. This article looks at the potential uses for this device in detail as well as the principles of operation behind them.
The BUL510 transistor is a small signal transistor with a low voltage rating of 30V, a collector current rating of up to 500 mA, and a power dissipation of 225 mW. It therefore finds widespread use in a number of low-voltage, low-power applications. In particular, it is often used as a driver amplifier in audio circuits, voltage booster and regulator circuits, mixers, and various RF amplifiers. The low-voltage rating makes it suitable for use in a wide range of applications, from automotive electronics to consumer appliances.
In addition to its low-voltage operation, the NPN structure of the BUL510 provides two stable states - ON and OFF. This two-state functionality makes it ideal for switching applications such as logic-level gate drivers or power supply switching circuitry. The device can be used to control the flow of current, controlling the voltage level and amount of current flowing into other circuits, thus providing a wide range of options for controlling circuitry.
The BUL510 is a bipolar junction transistor (BJT). BJTs consist of two types of doped semiconductor material, N-type and P-type, which are sandwiched together to form an intrinsic arrangement known as a base-emitter junction. The junction allows current to flow between the two material layers, creating an amplification based on the input signal applied between the base and emitter of the transistor. This amplifying property makes the BJT useful in driver amplifier, voltage booster, and regulator circuits as well as other switching applications. The current flow characteristics of the BUL510 are controlled by the input voltage applied to its base-emitter junction, which in turn creates a corresponding output current that is amplified by the transistor.
The BUL510 is a single NPN BJT capable of providing amplification and switching capabilities in a wide range of applications. Its low voltage rating and two-state operation makes it an ideal choice for audio, video, and precision measurement applications as well as power supply switching and logic-level switching. Its current flow and amplification properties make it suitable for use in a variety of driver amplifier and voltage booster circuits. In essence, the BUL510 is a versatile, low-voltage transistor that is capable of providing a number of functions.
The specific data is subject to PDF, and the above content is for reference
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BUL510 Datasheet/PDF