BULT118M

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BULT118M application field and working principle

BULT118M is a single bipolar Junction Transistor (BJT) product from ON Semiconductor Corporation. It is a high-performance device boasting proven reliability and true monolithic integration, designed for audio amplifiers, IF, RF and other amplifier applications. The device is packaged in a SLT (SOT-26) plastic package for surface mount applications with excess power dissipation of 1 Watt. This article introduces the BULT118M application field and working principle.

Application field

BULT118M series devices can be used in audio amplifiers, IF, RF and other amplifier applications. These applications include low frequency wireless applications such as wireless handsets, wireless receivers and amplifiers, battery chargers and small amplifiers, etc. In addition, devices in the BULT118M series can also be used in wideband communications and other applications requiring high frequency response and low distortion performance.

The BULT118M series are designed for excellent performance in medium and high power audio applications. They provide low distortion and high-power characteristics up to 1.2V supply voltage and beyond. They are ideal for applications in low frequency wireless applications and for high slew rate, high-power applications such as switching regulators and audio amplifiers.

The BULT118M series are designed for high performance in low frequency wireless applications such as wireless handsets, wireless receivers and amplifiers, battery chargers and small amplifiers, engine management and power conversion systems, etc. They can also be used in ultra-wideband communication systems, as well as a range of audio and video applications, such as audio amplifiers, IF amplifiers and RF amplifiers, providing excellent performance in terms of distortion and signal-to-noise ratio.

Working principle

The main working principle of BULT118M series devices is based on the classic BJT structure, which is composed of three main components: an emitter, collector and base terminals. This BJT structure has two asymmetric junctions, base-emitter junction and base-collector junctions, each of which serves a different purpose. The base-emitter junction is heavily doped and is ON when forward biased, allowing current to flow from the emitter to the base, while turning OFF when reverse biased, preventing currents from flowing in either direction. The base collector junction is lightly doped and is ON when reverse biased, allowing current to flow from the collector to the base, while turning OFF when forward biased, preventing currents from flowing in either direction.

When the device is in the ON state, current can flow from the emitter to the base and from the collector to the base, which will cause the voltage at the base to rise, increasing the current from the collector to the base, resulting in an amplification of the input signal. Conversely, when the device is in the OFF state, current cannot flow from the emitter to the base or from the collector to the base, thus preventing the device from amplifying the input signal.

BULT118M series devices are specially designed to allow high current saturation when in the ON state and low current leakage when in the OFF state, enhancing the performance of high-performance applications. The devices are also specially designed to ensure that their operating temperature range is between -55°C and 125°C, providing reliable performance and easy device management.

Conclusion

BULT118M series devices are high-performance, reliable single BJT products from ON Semiconductor Corporation. The devices are designed for excellent performance in medium and high power audio applications and in low frequency wireless applications such as wireless handsets, wireless receivers and amplifiers, battery chargers and small amplifiers, ultra-wideband communication systems, as well as a range of audio and video applications. The devices feature a classic BJT structure, with two asymmetric junctions, base-emitter junction and base-collector junctions, which allows high current saturation when in the ON state and low current leakage when in the OFF state. The devices also feature a wide operating temperature range from -55°C to 125°C and are packaged in a SLT (SOT-26) plastic package for surface mount applications.

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