Allicdata Part #: | 497-2633-5-ND |
Manufacturer Part#: |
BUR51 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 200V 60A TO-3 |
More Detail: | Bipolar (BJT) Transistor NPN 200V 60A 16MHz 350W C... |
DataSheet: | BUR51 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 5A, 50A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5A, 4V |
Power - Max: | 350W |
Frequency - Transition: | 16MHz |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-3 |
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The BUR51 transistor is a type of bipolar junction transistor (BJT) classified as a single device. It is used for a variety of applications, including switching, linear amplification, and light-emitting diode (LED) drive. It is an affordable device that has good power dissipation and can be easily integrated into existing circuits.
The BUR51 is a low-power general-purpose NPN bipolar transistor with a maximum Collector-emitter voltage of 90 V and a maximum current rating of 0.5 A. It features a low collector-emitter saturation voltage and a low operating current. It can be used in low-voltage, low-power circuits, including switch circuits and voltage stabilizers.
The BUR51\'s most common application is controlling current flow by creating an on/off switch or variable resistance in an electronic circuit. In linear amplification applications, the transistor is used to amplify an electrical signal, and in LED driver applications, it is used to control the current flowing through the LED. The BUR51 transistor can also be used in power supply design by switching the desired AC power to a direct current (DC) signal.
The working principle of the BUR51 transistor is based on the concept of a depletion-layer diode. This diode has two layers, a P-type layer and an N-type layer, that can be controlled by a small electrical current. When electrons are injected into the P-type layer, it creates an electric field that repels the electrons, and when electrons are injected into the N-type layer, it creates an electric field that attracts the electrons. By controlling the current, the P-type and N-type layers can be switched on or off, creating an electronic switch.
The BUR51 transistor is made up of three pins, a collector (C), base (B) and emitter (E). A voltage must be applied to the base in order to activate the collector-emitter junction and allow currents to flow. By simply changing the magnitude of the voltage applied to the base, the current in the collector-emitter junction can be controlled.
When the base voltage is low, no current flows through the collector-emitter junction. However, when a voltage is applied to the base, the collector-emitter voltage drops, allowing a current to flow through the collector-emitter junction and from the collector to the emitter. A small current will flow through the base circuit and be amplified in the collector-emitter circuit.
The BUR51 transistor is a versatile device that is used in a wide range of products and applications. It has a low input current and low saturation voltage, which makes it ideal for use as an amplifier or switch. Furthermore, its wide range of operating frequencies makes it a suitable choice for switching and voltage stabilizer applications. In LED driver applications, it can be used to control the current flowing through the LED.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BUR51 | STMicroelect... | 0.0 $ | 1000 | TRANS NPN 200V 60A TO-3Bi... |
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