BUT11ATU Allicdata Electronics
Allicdata Part #:

BUT11ATU-ND

Manufacturer Part#:

BUT11ATU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 450V 5A TO-220
More Detail: Bipolar (BJT) Transistor NPN 450V 5A 100W Through...
DataSheet: BUT11ATU datasheetBUT11ATU Datasheet/PDF
Quantity: 793
Stock 793Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Power - Max: 100W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: BUT11
Description

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Transistors - Bipolar (BJT) - Single

The Bipolar Transistor (BJT) is one type of transistor that has two PN junctions and needs current to switch between the collector and emitter. BJTs can be divided into two types: NPN transistors and PNP transistors. The BUT11ATU is a small-signal NPN general-purpose transistor.

Application fields of BUT11ATU

The BUT11ATU is a high performance NPN transistor, and is popularly used in long distance communication, loud-speaker drivers, high-fidelity equipment, switching power supply, low power inverters, pulse circuits, and other electronic equipment.

The BUT11ATU can also be used in regulated supply, display drivers, digital circuits, analog circuits and other applications because of its low saturation voltage, high gain and low noise.

Working principle of BUT11ATU

The working principle of the BUT11ATU is the same as that of other bipolar transistors. It has an emitter, collector and base and consists of three PN junctions.

When the voltage applied to the base is higher than a certain threshold and the transistor is turned on, electrons are injected into the emitter, and holes are injected into the base and a current will flow from the emitter to the collector.

At the same time, a positive voltage is applied to the collector, causing a large number of electrons to be collected, forming a depletion layer at the base-collector PN junction. In this way, the voltage applied to the base controls the current flowing through the collector.

When the voltage applied to the base is lower than a certain threshold value, the transistor is turned off and no current flows through the collector. In this way, the BUT11ATU can be used for all kinds of switching and amplification functions.

Conclusion

The BUT11ATU is a high performance NPN general-purpose transistor, and it is widely used in long distance communication, loud-speaker drivers, high-fidelity equipment, switching power supply, low power inverters, pulse circuits, and other electronic equipment due to its low saturation voltage, high gain and low noise. The working principle of the BUT11ATU is mainly based on the PN junction and current injection, and it can be used for switching and amplification functions.

The specific data is subject to PDF, and the above content is for reference

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