BUX84-S

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Transistors are commonly used to amplify or switch electronic signals. Bipolar junction transistors, or BJTs, are the most common type of transistor used today. The BUX84-S is a single, planar passivated NPN silicon BJT. This transistor provides superior performance in the fields of switching, amplification, and blocking applications. In this article, we will explore the BUX84-S’s application fields and working principle.

Application Fields

The BUX84-S is designed for use in various applications such as digital switches, CD players, and power management for computers, domestic appliances, and automotive electronic systems. It is suitable for low-noise amplifiers, analog circuits, and voltage regulation. It can also be used in applications requiring high-frequency gain, as well as high-speed switching and linear amplification.

The BUX84-S provides stable gain characteristics over a wide frequency range, allowing it to be used in frequency-sensitive applications. Its high breakdown voltage and thermal resistance make it suitable for use in high-temperature applications. The BUX84-S’s small package size and low collector-emitter saturation voltage make it an ideal choice for space-constrained applications.

Working Principle

A bipolar junction transistor is a three-terminal semiconductor device composed of two P-N junctions. It is made up of two P-type and one N-type materials, forming an NPN or PNP transistor. In the NPN structure of the BUX84-S, electrons from the N-type material flow through the P-type material, creating a base voltage. This base voltage creates a potential difference between the collector and the emitter, which produces a current flow from the collector to the emitter. By increasing or decreasing the current through the base, the current from the collector to the emitter can be increased or decreased. This current control is what makes the BUX84-S an effective switching and amplifying device.

The BUX84-S has a high-frequency current gain of 220 at 10MHz. This means that a small current change at the base can control a large current change at the collector-emitter. As such, the BUX84-S can be used as a high-gain amplifier and amplifying circuits. It also has a low-distortion characteristic, allowing it to be used in audio applications. The BUX84-S also has a high collector-emitter saturation voltage, allowing it to operate reliably in fast-switching and high-speed situations.

Conclusion

The BUX84-S is a high-performance NPN silicon BJT with high-frequency current gain of up to 220. It is well suited for use in a wide range of applications from digital switching and low noise amplifiers to high-speed switching and linear amplification. The BUX84-S has excellent thermal resistance and high-temperature capabilities, making it suitable for temperature-critical applications. Its small package size and low collector-emitter saturation voltage also make it an ideal choice for space-constrained applications. Finally, its high gain characteristics over a wide frequency range make it suitable for use in frequency-sensitive applications.

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