Allicdata Part #: | BY133GP-E3/73-ND |
Manufacturer Part#: |
BY133GP-E3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.3KV 1A DO204AC |
More Detail: | Diode Standard 1300V 1A Through Hole DO-204AC (DO-... |
DataSheet: | BY133GP-E3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1300V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 2A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-204AC (DO-15) |
Operating Temperature - Junction: | -- |
Base Part Number: | BY133 |
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The BY133GP-E3/73 diode is a single rectifier diode capable of effectively rectifying current in applications such as power-desulfation applications, high frequency rectification, high frequency switching, low forward voltage drop, and ultra-fast switching.
The BY133GP-E3/73 diode is a step recovery diode. It uses a Schottky diode as the rectifying element. Its construction consists of a metal-oxide semiconductor (MOS) layer, an N-type gallium arsenide (GaAs) semiconductor, and a PN junction formed at the interface between the semiconductor and the MOS layer. The PN junction rectifies current, converting it from alternating current (AC) to direct current (DC).
The BY133GP-E3/73 diode has many distinguishing characteristics, including: high speed, low forward drop rectifying capability, ultra-low switch-on voltage, and ultra-fast switching between high and low drain side currents. It also has an exceptionally low reverse-recovery charge, enabling superb high frequency rectification performance. This makes it an ideal choice for high-frequency switching applications.
The BY133GP-E3/73 diode also exhibits excellent temperature characteristics, making it particularly suitable for a variety of temperature-sensitive applications. Its wide operating temperature range of -55°C to +125°C allows it to be used in a wide range of operating environments.
Furthermore, the BY133GP-E3/73 diode features an integrated Schottky diode, enabling it to process high-frequency signals without added noise or distortion. Its compact size also makes it suitable for use in smaller applications. Additionally, its robust construction ensures a high level of reliability, rendering it suitable for long-term use in a wide range of applications.
In summary, the BY133GP-E3/73 diode is a single rectifier diode with high speed, low forward drop rectifying capability, ultra-low switch-on voltage, and ultra-fast switching between high and low drain side currents. It is particularly suited for use in power-desulfation applications, high frequency rectification, and high frequency switching applications due to its low forward voltage drop and ultra-fast switching characteristics. Furthermore, its robust construction and wide operating temperature range also make it suitable for use in a wide variety of operating environments.
The specific data is subject to PDF, and the above content is for reference
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