Allicdata Part #: | 1740-1455-ND |
Manufacturer Part#: |
BYC8D-600,127 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | DIODE GEN PURP 600V 8A TO220AC |
More Detail: | Diode Standard 600V 8A Through Hole TO-220AC |
DataSheet: | BYC8D-600,127 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.19647 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.9V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 40µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BYC8-600 |
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Diodes have become an integral part of electronics today. The BYC8D-600,127 is a single rectifier diode in a DO-214AA plastic SMD package. It is designed for high power general purpose applications such as rectifying power supply, switching power supply and so on.
The BYC8D-600,127 has the following features:
• Type : Ultra-Fast Recovery Rectifier
• Polarity: Cathode / Anode
• Package : SMD - DO-214AA
• Voltage : 600 V
• Current: 1.2 A
• Tj, Tstg : -55 ~ +150°C
• Permits the higher rated current and the low power dissipation.
• Low forward voltage drop, low reverse leakage current.
• Ultra-Fast Recovery from damas.
The BYC8D-600,127 have some key features which make it a better choice for rectifying power supply applications over other diodes. It has a low forward voltage drop and a low reverse leakage current. The ultra-fast recovery time from damas also makes it highly suitable for switching power supplies and other applications where a faster recovery time is important.
The working principle of a diode is based on the theory of the p-n junction. A diode consists of two layers of semiconductors. The p-type and n-type. The junction between them is called p-n junction and this is where the rectifying action of the diode takes place. When the anode of the diode is positive with respect to the cathode, a depletion region is created around the junction. This acts as a barrier for charge carriers and no current flows in the forward bias. However, when the cathode is positive with respect to the anode then majority carriers can flow through and the current flows through the diode in the forward direction.
The BYC8D-600,127 is a single rectifier diode, designed to be used in a variety of applications. It is widely used in power supplies, switching power supplies, high power applications such as motor drives and so on. It has a fast recovery time, low forward voltage drop and low reverse leakage current which makes it highly suitable for these applications.
In conclusion, the BYC8D-600,127 is a single rectifier diode which has a variety of applications in power supplies and other high power applications. With its features of low forward voltage drop and low reverse leakage current and ultra-fast recovery from damas, it is an ideal choice for power supply applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYC8-600P,127 | WeEn Semicon... | 0.55 $ | 3723 | DIODE GEN PURP 600V 8A TO... |
BYC8X-600P,127 | WeEn Semicon... | 0.57 $ | 4769 | DIODE GEN PURP 600V 8A TO... |
BYC8X-600,127 | WeEn Semicon... | 0.72 $ | 4890 | DIODE GEN PURP 600V 8A TO... |
BYC8D-600,127 | WeEn Semicon... | 0.22 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BYC8DX-600,127 | WeEn Semicon... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BYC8B-600PJ | WeEn Semicon... | 0.27 $ | 1000 | DIODE GEN PURP 600V 8A D2... |
BYC8-600,127 | WeEn Semicon... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
BYC8B-600,118 | WeEn Semicon... | 0.32 $ | 1000 | DIODE GEN PURP 500V 8A D2... |
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