Allicdata Part #: | BYD13MGPHE3/73-ND |
Manufacturer Part#: |
BYD13MGPHE3/73 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO204AL |
More Detail: | Diode Standard 1000V 1A Through Hole DO-204AL (DO-... |
DataSheet: | BYD13MGPHE3/73 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06900 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | BYD13M |
Description
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IntroductionBYD13MGPHE3/73 is a single diode used for rectification with extremely low forward voltage (VF). It is commonly used for on-board rectification applications where a low voltage drop is necessary, such as in high efficiency switching converters. This diode is suitable for a wide operating temperature range and has a fast recovery time. It is widely used in automotive and military electronics.
Product Features
-Low forward voltage drop VF(max) @ IF=4A = 0.45V
-High surge current capability
-High efficiency
-Fast recovery time
- Operating temperature range -55 ℃~+150 ℃
- High performing in extreme temperatures
Application Field
Due to its low forward voltage, fast recovery time and high surge current capability, the BYD13MGPHE3/73 is well suited for power rectification in automotive applications, such as car audio systems, engine control systems, and ground station power supply. It is also used in military applications and power plants.Working Principle
A diode is a semiconductor device used for rectification. It consists of two electrodes, anode and cathode, which are connected across a junction of semiconductor material. When a positive voltage is applied to the anode, electrons from the semiconductor material move toward the anode, creating current in the circuit. When a negative voltage is applied to the cathode, the electrons in the semiconductor material move away from the cathode, creating a gap between them called the depletion layer. This prevents current from flowing in the opposite direction. The BYD13MGPHE3/73 uses a Schottky diode rectification process, which is characterized by a low forward voltage (VF). This diode also has a fast recovery time, making it suitable for on-board rectification.Conclusion
In conclusion, the BYD13MGPHE3/73 is an single diode used for rectification, with applications in automotive, military, and power plants. Its low forward voltage and fast recovery time make it well suited for on-board rectification, allowing higher efficiency and a wide operating temperature range.
The specific data is subject to PDF, and the above content is for reference
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BYD13JGP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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