Allicdata Part #: | BYD33MGPHE3/73-ND |
Manufacturer Part#: |
BYD33MGPHE3/73 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO204AL |
More Detail: | Diode Standard 1000V 1A Through Hole DO-204AL (DO-... |
DataSheet: | BYD33MGPHE3/73 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06900 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 300ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | BYD33M |
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The BYD33MGPHE3/73 is a single-phase fast recovery rectifier diode with a wide range of applications. It is commonly used for electronic and electrical equipment, such as motor controls, AC/DC motor overload protection, DC-DC converters, and photovoltaic solar panels. The fast recovery rectifier diode can also be used for AC/DC power supplies, switching power supplies, or any other application requiring high power rectification.
The BYD33MGPHE3/73 is constructed of two opposing semiconductor layers sandwiched between two conductive plates. These semiconductor layers are made of either N- or P-type Silicon.One layer has two anode or emitter connections and one cathode or collector connection while the other layer has one anode connection and two collector connections. The plate design allows the electric current to flow in a predetermined direction only. The current flows between the cathode connection and one of the anode connections and from the other anode connection to the collector connection. The BYD33MGPHE3/73 diode has a blocking voltage of 33V, a current range of 1.0A-3.0A, and a forward voltage of 1.2V.
The BYD33MGPHE3/73 is most commonly used in circuits requiring fast switching and protection from input currents, such as motor overload protection. It works by changing the direction of electric current in order to protect circuits from excessive current flows. When a current greater than the rated current of the diode is applied to the circuit, the diode blocks it, thus providing protection to the circuit. The diode also provides fast switching speeds and low power consumption.
The BYD33MGPHE3/73 diode has several advantages over other types of diodes. It has a faster turn-on time than other diodes, allowing for more efficient powering and quicker response to sudden changes in current. It can operate over a wide range of input voltages and is capable of converting DC voltage to AC voltage. The diode also has low forward and reverse stand-off voltages, minimizing power losses. Additionally, it has a long life span of over 100,000 hours, making it ideal for protection applications.
The BYD33MGPHE3/73 diode is an ideal choice for many applications requiring fast rectification and protection from excessive current flows. Its fast switching speeds and wide range of input voltages make it a great choice for AC/DC power supplies, switching power supplies, photovoltaic solar panels, and other electrical applications. Its low forward and reverse stand-off voltages and long life span also make it an ideal choice for motor overload protection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYD33DGP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYD33GGP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYD33JGP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
BYD33KGP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYD33MGP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYD33DGP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYD33GGP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYD33JGP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
BYD33KGP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYD33MGP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYD33DGPHE3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYD33GGPHE3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYD33JGPHE3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
BYD33KGPHE3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYD33MGPHE3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYD33DGPHE3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYD33GGPHE3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYD33JGPHE3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
BYD33KGPHE3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYD33MGPHE3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYD37M,115 | NXP USA Inc | 0.0 $ | 1000 | DIODE AVALANCHE 1KV 600MA... |
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