Allicdata Part #: | BYM12-200HE3_A/H-ND |
Manufacturer Part#: |
BYM12-200HE3_A/H |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO213AB |
More Detail: | Diode Standard 200V 1A Surface Mount DO-213AB |
DataSheet: | BYM12-200HE3_A/H Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.08510 |
Series: | Automotive, AEC-Q101, Superectifier® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
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BYM12-200HE3_A/H is a diode rectifier, which is a two-terminal electronic component, which enables current to flow in one direction only. The BYM12-200HE3_A/H is an integrated package, which is designed to manage energy to produce a stable current for functional applications in fields such as remote controls, industrial automation, motor control, and many other applications.
Applications
Because of their ability to manage power efficiently, they are widely used as power switches, voltage regulators, rectifiers, and as switching/driving elements in power management applications. Examples of applications include: speed control, temperature control, solenoid control, DC converters, radio transmitters and receivers, antenna amplifiers, voltage protection modules, sound amplifiers and power supplies.
The BYM12-200HE3_A/H is used in industries such as the medical industry, automotive industry, industrial automation and control, computer, telecommunications, aerospace and defense, transportation and fuel cells, among others. This diode can be used in various types of application fields, including RF, motor control, batteries, industrial power control, digital logic, and telecom.
Working Principle
The BYM12-200HE3_A/H is a Protected Mode Full Recovery Superfast Rectifier. And it has a low forward voltage drop, making it very efficient, and it has a higher surge capability, making it more reliable. The diode is constructed utilizing a hybrid structure of silicon and air, allowing for a small form factor and minimal contact resistance, which increases efficiency and reliability.
The working principle of the BYM12-200HE3_A/H is based on the PN (positive-negative) junction between two conductors. When a negative voltage is applied to the anode of the diode, this encourages the electrons to move toward the junction, which decreases the number of electrons in the anode, while the number of electrons decreases in the cathode. This creates a lower potential between the electrodes, known as the ‘PN’ junction. As a result, current flow is allowed only in one direction, which is from anode to cathode.
In a BYM12-200HE3_A/H, the protection layer is a zinc oxide layer, and when there is high reverse voltage, a current is generated that causes protective characteristics of the diode to be displayed. Low leakage current is ensured by the control of voltage and current, while precise voltage control is ensured by the decrease in temperature-dependent voltage drop.
Conclusion
The BYM12-200HE3_A/H is a versatile, efficient and reliable diode rectifier, used in a variety of fields and applications. It features applications in industrial, medical, automotive and telecommunications industries, among others. And its working principle is based on the positive-negative junction between two conductors, allowing for current to flow only in one direction. With a low forward voltage drop and higher surge capability, this diode is an ideal and reliable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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BYM10-1000-E3/96 | Vishay Semic... | -- | 42000 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-400-E3/96 | Vishay Semic... | -- | 16500 | DIODE GEN PURP 400V 1A DO... |
BYM12-200-E3/96 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 1A DO... |
BYM13-60-E3/96 | Vishay Semic... | -- | 10500 | DIODE SCHOTTKY 60V 1A DO2... |
BYM10-50-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-200-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 200V 1A DO... |
BYM10-100-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
BYM10-50-E3/96 | Vishay Semic... | -- | 4500 | DIODE GEN PURP 50V 1A DO2... |
BYM11-1000-E3/96 | Vishay Semic... | -- | 13500 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-100-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM11-600-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-600-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-800-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM13-20-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-20HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-30HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40-E3/97 | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-40HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-50HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-60HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-20HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-40-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-30-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-20-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM11-1000HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYM11-800HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM12-100HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM12-150HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
BYM12-200HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYM12-300HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
BYM12-400HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYM12-50HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-1000-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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