BYM12-200HE3/97 Allicdata Electronics
Allicdata Part #:

BYM12-200HE3/97-ND

Manufacturer Part#:

BYM12-200HE3/97

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 1A DO213AB
More Detail: Diode Standard 200V 1A Surface Mount DO-213AB
DataSheet: BYM12-200HE3/97 datasheetBYM12-200HE3/97 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.10618
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: BYM12-200
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Description

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The BYM12-200HE3/97 is classified as a single rectifier diode and can be utilized in various industrial and consumer applications. It is a semiconductor that utilizes a PN Junction to divert electrical current in one direction, which is primarily intended for rectifying AC current. As a one-way valve for electrical current, the semiconductor diode is most commonly used to control the surge of electrical current.

Some of the most common applications for the BYM12-200HE3/97 include voltage regulation, power supplies, radio and television amplifiers, switching operations, and logic systems.

This single rectifier diode is designed with a maximum forward current of 200 mA, peak reverse voltage of 200 V, and a maximum reverse current of 12 µA. Its maximum forward voltage drop is 1.1 V and its typical junction capacitance is 30 pF. The diode is capable of reaching an operating temperature between -65°C and 150°C in order to suit a wide variety of application needs.

The working principle of the diode involves utilizing a PN-junction to control the flow of current. The semiconductor junction holds the power electrons close, but not completely. Due to the P-type (positive) and N-type (negative) materials in the diode, the joined forces make it a unidirectional device.

The current can travel from the anode side (positive) to the cathode side (negative). The power electrons on the anode side become charged, while those on the cathode side become deprived of charge, allowing the current to flow in one direction only. It effectively removes any electrical components that are not needed and ensures that the flow of the current is only through those components that require it.

The BYM12-200HE3/97 can be used in various applications and projects due to its features. Additionally, it offers durability and high current conduction capacity which enables it to handle higher amounts of current as compared to other standard diodes or rectifiers.

The specific data is subject to PDF, and the above content is for reference

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