BYS10-35-E3/TR3 Allicdata Electronics
Allicdata Part #:

BYS10-35-E3/TR3-ND

Manufacturer Part#:

BYS10-35-E3/TR3

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 35V 1.5A DO214AC
More Detail: Diode Schottky 35V 1.5A Surface Mount DO-214AC (SM...
DataSheet: BYS10-35-E3/TR3 datasheetBYS10-35-E3/TR3 Datasheet/PDF
Quantity: 1000
7500 +: $ 0.05769
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 35V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: BYS10-35
Description

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A BYS10-35-E3/TR3 is a rectifier diode with a unique construction that is designed for a wide range of applications. It is a single diode that is composed of two symmetric, bidirectional rectifier elements mounted on a single substrate. The two elements have their anodes connected to a common cathode, allowing the device to conduct current in either polarity.

The BYS10-35-E3/TR3 is a medium- to high-power single-diode rectifier device with a peak repetitive reverse blocking voltage of 50 volts (VRRM) and a maximum forward surge current of 150 amperes. It has a forward voltage drop of 0.65 volts at a forward current of 35 amps and a minimum forward breakdown voltage of 75 volts. It is suited for commercial and industrial applications with typical application fields such as switched mode power supplies, dc-to-dc converters, and various high-power plant and equipment.

The working principle of the BYS10-35-E3/TR3 is quite simple. When the diode is forward biased, the anode is more positive than the cathode and the diode is allowed to conduct current. In this condition, the bypass layer allows the current to flow, thus creating a forward biased PN junction. When the diode is reverse biased, the anode is more negative than the cathode and the diode is blocked and does not conduct any current.

Because the diode has an extremely low forward voltage drop, it is ideal for applications where power loss must be kept to a minimum, such as switched mode power supplies. The diode is also designed to withstand high surge current, making it an ideal choice for applications such as dc-to-dc converters that require high current regulation for power transfer. Finally, the diode\'s low reverse leakage current means it can be used in high-power plant and equipment.

The BYS10-35-E3/TR3 single diode is a versatile device that can be used in a variety of applications. It has low forward voltage drop, can withstand high surge current, and features low reverse leakage current. Because of its unique construction and wide range of applications, it is an ideal choice for commercial and industrial applications that require dependable and efficient power conversion.

The specific data is subject to PDF, and the above content is for reference

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