BYV40E-150,115 Allicdata Electronics
Allicdata Part #:

BYV40E-150,115-ND

Manufacturer Part#:

BYV40E-150,115

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: DIODE ARRAY GP 150V 1.5A SC73
More Detail: Diode Array 1 Pair Common Cathode Standard 150V 1....
DataSheet: BYV40E-150,115 datasheetBYV40E-150,115 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.16075
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Description

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BYV40E-150,115 rectifier diodes are metal oxide semiconductor field effect transistors (MOSFETs) that are used to regulate the current flow between different electrical components. They are typically used in applications that require high power handling, low voltage resistance, and fast response times. This article will discuss the application fields and the working principle of BYV40E-150,115 in more detail.

Application of BYV40E-150,115:

  • Power electronics applications such as the conversion of alternating current (AC) to direct current (DC), or DC to AC, for the purpose of improving efficiency.
  • Used in cameras, computers, TVs, and other digital equipment that require regulated current.
  • Used as a switch in applications such as motor speed control and lighting control.
  • Used in data communication for isolation and protection purposes.

BYV40E-150,115 diodes are constructed using a metal–oxide–semiconductor field-effect transistor (MOSFET) as the active component. The MOSFET works by allowing current to flow between source and drain terminals when a voltage is applied to its gate electrode. The gate controls the current flow of the transistor by meters, such as a resistor, or a capacitor, or both, making the BYV40E-150,115 suitable for current and voltage regulation. The device can also reliably switch high frequency signals or alternating currents.

When a voltage is applied to the gate electrode, free electrons in the MOSFET channel become negatively charged. This forms a conductive channel between source and drain electrodes, allowing current to flow from source to drain in a controlled and linear fashion. When the voltage is removed from the gate, the conductive channel closes, effectively stopping current flow. This is the basis of the MOSFET and is how the BYV40E-150,115 allows designers to precisely control current flow and voltage levels.

The BYV40E-150,115 rectifier diodes are commonly used in applications that require high power handling, low voltage resistance and fast response times. For example, they can be used in power electronics applications to convert AC to DC or vice versa, in order to help improve efficiency in circuits. They are also found in cameras, computers and other digital equipment that requires regulated current, as well as in data communication applications for isolation and protection. Additionally, BYV40E-150,115 diodes are used as switches for applications such as motor speed control and lighting control.

In conclusion, BYV40E-150,115 rectifier diodes are used for a wide range of applications and offer great potential for regulating voltage, controlling current flow and providing protection from errors in data communication. Their MOSFET structure, high power handling and low voltage resistance make them suitable for most applications.

The specific data is subject to PDF, and the above content is for reference

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