BYV541V-200 Allicdata Electronics
Allicdata Part #:

497-2689-5-ND

Manufacturer Part#:

BYV541V-200

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: DIODE MODULE 200V 50A ISOTOP
More Detail: Diode Array 2 Independent Standard 200V 50A Chassi...
DataSheet: BYV541V-200 datasheetBYV541V-200 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 50A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Description

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Diodes-Rectifiers-Arrays is a type of electronic component for performing rectification, controlling current and voltage, switching, and other operations. The BYV541V-200 is a three-terminal 200V N-channel MOSFET transistor manufactured by STMicroelectronics. It is an insulated-gate field-effect transistor (IGFET) that is capable of blocking high voltage while maintaining low on-state resistance.

The BYV541V-200 is widely used in automotive, industrial, and consumer applications due to its robust and reliable performance. It is often used in applications such as motor control, power conversion and regulation, and solar energy systems. In automotive applications, the device is often used for in-vehicle battery management, switch mode power converters, andgate drivers for high-power DC-DC converters.

The BYV541V-200 is also used in industrial and consumer applications such as washing machines, air conditioners, pumps, and other motor control and power conversion equipment.

The main purpose of the device is to control the flow of current and voltage. The device works by using an electric field to control the flow of current through the MOSFET. The electric field is created by applying a voltage between the gate and the source terminals. The gate terminal acts as a controller, allowing the device to control the flow of current between the source and drain. When the gate voltage is increased, the mobile electrons form a channel, allowing the current to flow through the device.

The BYV541V-200 has a fast switching speed which is beneficial in applications such as motor control and power conversion. The device is also designed to offer low on-state resistance, which reduces power losses and allows for better efficiency. The device also features an extended temperature range, which is ideal for operating in environments with extreme temperatures.

The BYV541V-200 is an extremely reliable device with a long life span and low power consumption. It is highly resistant to damage from surge currents, making it ideal for applications such as motor controls and power converters.

In conclusion, the BYV541V-200 is a highly reliable and robust three-terminal 200V N-channel MOSFET transistor used in many automotive, industrial, and consumer applications. It is capable of blocking high voltage while maintaining low on-state resistance and has a fast switching speed and extended temperature range. The device is also highly resistant to damage from surge currents, which makes it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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