BZA456A,125 Allicdata Electronics
Allicdata Part #:

BZA456A,125-ND

Manufacturer Part#:

BZA456A,125

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Nexperia USA Inc.
Short Description: TVS DIODE 5.6V 8V 6TSOP
More Detail: N/A
DataSheet: BZA456A,125 datasheetBZA456A,125 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.05596
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Base Part Number: BZA4*A
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 240pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 24W
Series: --
Voltage - Clamping (Max) @ Ipp: 8V
Voltage - Breakdown (Min): --
Voltage - Reverse Standoff (Typ): 5.6V
Unidirectional Channels: 4
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The BZA456A,125 Silicon TVS-diode is a unidirectional, transil-diode which provides fast overvoltage protection and is suitable for switching mode power supplies and low transient voltage applications in electronic systems. It is suitable for use in 24 to 28 VDC applications. Its reverse breakdown voltage is 456 V and it has an ESD protection capability of a minimum of 8kV HBM and 25A peak pulse current. Its typical reverse leakage mA is maximum 0.5mA at 125°C and its operating temperature range is -55°C to 150°C.

The BZA456A,125 has an integrated ESD protection circuit which helps to protect sensitive electronic components from damage and disruption caused by Electrostatic Discharge (ESD). It can be used to protect against IEC 61000-4-2 ESD, IEC 61000-4-4 EFT and IEC 61000-4-5 Surge. This diode also has an overvoltage protection feature that helps to protect components from harm caused by surges or transients. Its low clamping voltage can be used to provide safe operation against overvoltage events.

The BZA456A,125 is capable of dissipating up to 5W of power, making it suitable for high power applications. It is designed to provide maximum protection and lowest possible leakage current. The BZA456A,125 is RoHS compliant and has UL recognition.

The working principle of the BZA456A,125 is based on the avalanche breakdown effect. This effect occurs in Zener diodes when a high enough electric field is applied across the junction of the diode. The avalanche effect causes carriers in the depletion region of the junction to be accelerated to energies high enough that they can cause further ionisation, leading to an avalanche current flowing through the diode. This effect produces very low levels of reverse leakage current, making this type of diode very suitable for use in overvoltage protection and other applications.

The BZA456A,125 Silicon TVS-diode is suitable for a wide range of applications, including automotive, telecom, medical, industrial, and consumer electronics. It is especially useful in applications where strong overvoltage protection is needed. It is also suitable for applications where fast switching protection is needed, as it provides high surge current handling capability. It can provide protection against surges, induction, lightning, or overvoltage events in power supply circuitry.

In summary, the BZA456A,125 Silicon TVS-diode is a unidirectional, transil-diode which provides fast overvoltage protection and is suitable for switching mode power supplies and low transient voltage applications in electronic systems. It has an ESD protection capability of a minimum of 8kV HBM and 25A peak pulse current, making it suitable for a wide range of applications. Its working principle is based on the avalanche breakdown effect, resulting in very low levels of reverse leakage current. It is RoHS compliant and has UL recognition.

The specific data is subject to PDF, and the above content is for reference

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