BZB84-B22,215

Diodes - Zener - Arrays

The BZB84-B22,215 is a widely used device in electronics manufacturing today. It is a type of diode array that utilizes a special kind of zener diode known as a backward diode. This design is extremely well suited to protect circuits from the damaging effects of transient voltages or surges. The device can also provide a reliable, low-clipping on rectification and noise control.

Application Field

The BZB84-B22,215 can be used in a variety of applications such as DC/DC converters, rail-road interface, industrial control systems and voltage regulator circuits. The device is also frequently used to protect isolated communication ports, wireless RF circuits and consumer electronics products against damaging over-voltage events. The device can also provide a level of noise immunity to sensitive circuits by suppressing electromagnetic interference.

Working Principle

The BZB84-B22,215 utilizes a special type of zener diode known as a backward diode. This design yields a unique combination of features that make it particularly well suited for electronic protection applications. These features include low leakage current, low breakdown voltage, and fast response time. This combination of features enables the device to react quickly to surges, whilst maintaining its low power consumption due to its low leakage currents.

The device is also typically characterized by its high frequency breakdown capability, which is due to the properties of its active region. In this device it is composed of a P-epitaxial layer and an N-epitaxial layer, which are sandwiched together with an additional active layer known as the doping isolation layer. This active layer is responsible for providing the breakdown voltage and fast switching speed. The P-epitaxial layer ensures that the device can maintain its low leakage properties, whilst the N-epitaxial layer ensures that the device can rapidly recognise and approach voltage breakdown levels.

The device is typically most effective when reverse biasing with a power supply and an external capacitor is connected between the two terminals. This arrangement allows the device to reduce leakage current and improve its voltage protection level, the external capacitor also serving to absorb the transient energy generated by a surge. In this configuration a current limiting resistor is also typically connected in series with the cathode to protect it from damage, whilst ensuring that the device does not damage itself or other components in the circuit.

In summary the BZB84-B22,215 is a widely used device in electronics manufacturing, which is a type of diode array that utilizes a special kind of Zener diode, known as a backward diode. It is well suited to protect circuits from the damaging effects of transient voltages or surges, whilst providing reliable low-clipping on rectification and noise control.