BZB84-C75,215 Allicdata Electronics
Allicdata Part #:

BZB84-C75,215-ND

Manufacturer Part#:

BZB84-C75,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER ARRAY 75V SOT23
More Detail: Zener Diode Array 1 Pair Common Anode 75V 300mW ±5...
DataSheet: BZB84-C75,215 datasheetBZB84-C75,215 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.02860
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 255 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 52.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Description

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The BZB84-C75,215 is a high voltage Zener diode array, developed to be used in a variety of applications. It is made up of three zener diodes in one package, offering low leakage and high breakdown voltages. It is designed to be used as a voltage reference or to protect a circuit from transients or overvoltage peak pulses. It is commonly used in voltage regulation, temperature compensation, overvoltage protection, as a voltage reference, and other applications.

The BZB84-C75,215 diode array consists of three Zener diodes operated in series. Each diode has a breakdown voltage of 25 volts and protects up to 75 volts of the circuit that it is protecting. The breakdown voltage of the diodes in series will increase the total breakdown voltage to 225 volts. In the BZB84-C75,215 the zener diodes can be reverse biased, allowing for the same total breakdown voltage to be maintained. The maximum power dissipation across the diode array is 900mW.

The working principle of the BZB84-C75,215 is based on the Zener effect. The Zener effect occurs when an electric current passes through a diode in reverse-biased condition. In this condition, the diode\'s P-N junction forms a reverse-biased depletion region. The depletion region prevents most of the electric current from passing through the diode and a small amount of the current will still be able to flow across the diode, albeit at a reduced voltage. The Zener diode effectively limits the current and voltage by not allowing the voltage across the diode to exceed its breakdown voltage.

The breakdown voltage of the BZB84-C75,215 can be adjusted to meet the specific circuit requirements by varying the series resistances. The diodes can also be utilized for temperature compensation of other circuits by connecting the Zener diode in parallel with other resistances. Additionally, the BZB84-C75,215 can be used in overvoltage protection, as activity power and other circuits are forced to operate within the specified range when the voltage level is too high. The diode array also finds applications as a voltage reference, allowing precise voltage regulation.

The BZB84-C75,215 is a reliable and cost-effective solution for a variety of voltage regulation and overvoltage protection applications. It is designed to offer low leakage currents and maintain a high breakdown voltage, while also protecting against overvoltage peak pulses. It is commonly used in voltage regulation, temperature compensation, overvoltage protection, as a voltage reference, and other applications. The BZB84-C75,215 can be adjusted to meet specific circuit requirements and is a cost-effective solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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