BZD17C16P RHG Allicdata Electronics
Allicdata Part #:

BZD17C16PRHG-ND

Manufacturer Part#:

BZD17C16P RHG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 16V 800MW SUB SMA
More Detail: Zener Diode 16V 800mW ±5.625% Surface Mount Sub SM...
DataSheet: BZD17C16P RHG datasheetBZD17C16P RHG Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05758
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±5.625%
Power - Max: 800mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 12V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Description

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The BZD17C16P RHG is a single zener diode that features low voltage, low power consumption and high reliability. It is suitable for applications in various fields such as power supplies, logic circuits, and rectifiers. This diode also offers high-temperature and high-frequency performance.

The BZD17C16P RHG has a reverse recovery time of less than 10ns, which makes it suitable for high-frequency applications. It is designed for operation over a wide range of temperatures, from -65 to +175 degrees Celsius, with a total power rating of 500mW (milliwatts). In addition, it has a low operating voltage of just 2.4V, making it suitable for low-voltage applications as well. Furthermore, it has an ESD rating of >7V, providing additional protection from electrostatic discharge.

The BZD17C16P RHG is a p-n junction device, which means it has two semiconductor layers, with the n-type layer between the p-type layer. When the zener diode is connected in the forward direction and a positive voltage is applied, current flows due to the conduction of minority carriers. As the voltage increases, the current flow eventually reaches the zener voltage, and the diode begins to conduct in the reverse direction.

When the diode is in the forward-biased direction, the majority carriers occupy the p-type layer and the minority carriers occupy the n-type layer. The majority carriers are attracted to the anode and the minority carriers are attracted to the cathode. The combination of the majority and minority carriers creates a depletion region, which prevents carriers from moving across the p-n junction. When the reverse bias voltage reaches the zener voltage, the depletion region is eliminated and a large amount of current flows in the reverse direction.

The BZD17C16P RHG is typically used for protection from overvoltage and transient current spikes. This diode can be placed in series with the load, allowing for a controlled current flow and protection from overvoltage. It can also be used to provide an effective clamping voltage in an AC line filter.

In order to ensure proper operation, it is important to properly match the zener voltage to the application voltage. It is also important to ensure the zener diode is correctly configured with the forward current rating and the power rating. To ensure the highest level of reliability, the diode should be tested before and after being installed in the application.

The BZD17C16P RHG is a dependable single zener diode that is suitable for a wide range of applications. Its low voltage and low power consumption make it suitable for low-voltage applications, and its high temperature and high-frequency performance make it suitable for high-frequency applications. This diode can provide protection from transient current spikes and overvoltage, and it is a reliable solution for protection from potential damages.

The specific data is subject to PDF, and the above content is for reference

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