| Allicdata Part #: | BZD17C200PRQG-ND |
| Manufacturer Part#: |
BZD17C200P RQG |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 200V 800MW SUB SMA |
| More Detail: | Zener Diode 200V 800mW ±6% Surface Mount Sub SMA |
| DataSheet: | BZD17C200P RQG Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.08412 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 200V |
| Tolerance: | ±6% |
| Power - Max: | 800mW |
| Impedance (Max) (Zzt): | 750 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 150V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
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The BZD17C200P RQG diode is a single diode designed to work in various industrial and commercial applications. These diodes feature low forward voltage and reverse breakdown voltage, making them ideal for use in a variety of power regulation, signal modulation, and swtiching applications. They are also suitable for use in RF signal conditioning circuits, AC and DC rectification, and many other applications that require precise control of current flow.
The BZD17C200P RQG is a single Zener diode. It is made of a semiconductor material with a heavily doped p-type substrate layer, sandwiched between a pair of n-type contact regions. The doping process causes the substrate to be intrinsically positively charged. The applied forward voltage causes electrons to flow from n-type to p-type regions, creating a barrier to reverse current flow in the diode. When the voltage exceeds the diode\'s turn-on voltage, or its break down voltage, its designed reverse breakdown voltage is achieved shifting the barrier from a high impedance state to a low impedance state.
The BZD17C200P RQG features a reverse breakdown voltage of 200V ± 10%, a total power dissipation of 500mW, and a maximum permitted temperature of 85°C. It also has a low forward voltage of 1.0V (max) at 50mA. This diode is hermetically sealed, allowing it to be used in both high and low-temperature applications. It is also RoHS compliant, making it suitable for use in most industrial and commercial applications.
The BZD17C200P RQG is ideal for use in low-noise applications. It is especially useful in RF signal conditioning circuits where the diode maintains precise control of the current flow and contributes to low-noise operation. The diode is also suitable for use in power supply design, voltage regulation, switching, and motor control applications, as well as AC and DC rectification. It can also be used in over-voltage protection circuits as its low turn-on voltage ensures that the current flow remains within the rated range.
In conclusion, the BZD17C200P RQG is an excellent choice for a variety of industrial and commercial applications. It is designed to provide excellent thermal stability and noise performance, and its hermetic seal ensures its reliability in low-temperature applications. It has a low forward voltage, a high reverse breakdown voltage, and is RoHS compliant, making it suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| BZD17C36P MTG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 36V 800MW SUB... |
| BZD17C100P MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 100V 800MW SU... |
| BZD17C24P RHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 24V 800MW SUB... |
| BZD17C16P MQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 16V 800MW SUB... |
| BZD17C8V2P-E3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 800MW SMF DO2... |
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| BZD17C27P M2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 27V 800MW SUB... |
| BZD17C18P MTG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 18V 800MW SUB... |
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| BZD17C22P-E3-18 | Vishay Semic... | 0.09 $ | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C200P RVG | Taiwan Semic... | 0.12 $ | 1000 | DIODE ZENER 200V 800MW SU... |
| BZD17C180P RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 180V 800MW SU... |
| BZD17C200P RFG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 200V 800MW SU... |
| BZD17C51P RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 51V 800MW SUB... |
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| BZD17C120P R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE ZENER 120V 800MW SU... |
| BZD17C75P R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 75V 800MW SUB... |
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| BZD17C27P RVG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 27V 800MW SUB... |
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BZD17C200P RQG Datasheet/PDF