| Allicdata Part #: | BZD17C51PM2G-ND |
| Manufacturer Part#: |
BZD17C51P M2G |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 51V 800MW SUB SMA |
| More Detail: | Zener Diode 51V 800mW ±5.88% Surface Mount Sub SMA |
| DataSheet: | BZD17C51P M2G Datasheet/PDF |
| Quantity: | 1000 |
| 7500 +: | $ 0.06316 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 51V |
| Tolerance: | ±5.88% |
| Power - Max: | 800mW |
| Impedance (Max) (Zzt): | 60 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 39V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
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BZD17C51P M2G Application Field and Working Principle
A BZD17C51P M2G is a two-terminal, unilateral, surface-mount, silicon-based semiconductor device from Diodes Incorporated. The device provides a wide range of functionality in various applications and can be used in a variety of bases. This article will discuss the application field and working principle of the BZD17C51P M2G.
Application Field
BZD17C51P M2Gs are used in a variety of areas, especially in telecommunications and digital products. In telecommunications, they are commonly used in various types of circuit breakers which must be able to interrupt the flow of electricity or the transfer of data when certain conditions occur. They are also frequently used in transceivers and amplifiers, where their robust performance allows them to withstand high-power pulses that can occur in this type of environment.
In digital products, BZD17C51P M2Gs often appear as an alternative to transistors, as they provide a lower cost solution and are able to reduce power consumption. They are frequently used in logic circuits, such as logic gates and flip-flops, and can also be used in computing and memory applications. In addition, they are also useful in designing analog to digital converters (ADC) and digital to analog converters (DAC).
Working Principle
The BZD17C51P M2G is a zener diode and works on the principle of avalanche breakdown, which occurs when the electric field of the diode exceeds a certain threshold. When this happens, a large number of electrons are suddenly accelerated in the electric field, resulting in an avalanche of electrons that creates an exponential increase in current. This current surge then causes the device to become reverse biased, causing an extremely high resistance.
The voltage where this breakdown occurs is known as the breakdown voltage and is set by the design of the device. This breakdown voltage is the most important parameter of a zener diode and must be kept constant and within the specified range of the device. In the case of the BZD17C51P M2G, this breakdown voltage is 9.1 volts, allowing it to be used in various applications where a certain voltage level needs to be maintained.
Once the breakdown voltage is reached, the BZD17C51P M2G behaves like a resistor and will draw a constant current. This makes the device very useful for setting a fixed voltage in applications like power supplies and voltage regulators. It also allows the device to respond rapidly to voltage changes without needing to be tweaked or adjusted, making it a reliable component for digital applications.
Conclusion
The BZD17C51P M2G is a versatile two-terminal device from Diodes Incorporated that provides a wide range of functionality in various applications. It is mainly used in telecommunications and digital products, where it can be used as an alternative to transistors, as well as in logic circuits, computing and memory applications. The device works on the principle of avalanche breakdown, where the breakdown voltage is set by the design of the device. Once this breakdown voltage is reached, the device behaves like a resistor and will draw a constant current, allowing it to be used in various voltage-monitoring applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BZD17C24P RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 24V 800MW SUB... |
| BZD17C39P MHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 39V 800MW SUB... |
| BZD17C150P-E3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C27P RHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 27V 800MW SUB... |
| BZD17C51P RHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 51V 800MW SUB... |
| BZD17C18P MHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 18V 800MW SUB... |
| BZD17C30P-E3-18 | Vishay Semic... | 0.09 $ | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C16P RVG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 16V 800MW SUB... |
| BZD17C220P MQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 220V 800MW SU... |
| BZD17C12P RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 12V 800MW SUB... |
| BZD17C51P M2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 51V 800MW SUB... |
| BZD17C36P MTG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 36V 800MW SUB... |
| BZD17C100P MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 100V 800MW SU... |
| BZD17C24P RHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 24V 800MW SUB... |
| BZD17C16P MQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 16V 800MW SUB... |
| BZD17C8V2P-E3-08 | Vishay Semic... | -- | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C47P RTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 47V 800MW SUB... |
| BZD17C15P RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 15V 800MW SUB... |
| BZD17C36P RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 36V 800MW SUB... |
| BZD17C75P-E3-08 | Vishay Semic... | 0.1 $ | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C27P M2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 27V 800MW SUB... |
| BZD17C18P MTG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 18V 800MW SUB... |
| BZD17C62P RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 62V 800MW SUB... |
| BZD17C5V6P-E3-18 | Vishay Semic... | 0.09 $ | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C22P-E3-18 | Vishay Semic... | 0.09 $ | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C200P RVG | Taiwan Semic... | 0.12 $ | 1000 | DIODE ZENER 200V 800MW SU... |
| BZD17C180P RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 180V 800MW SU... |
| BZD17C200P RFG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 200V 800MW SU... |
| BZD17C51P RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 51V 800MW SUB... |
| BZD17C120P RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 120V 800MW SU... |
| BZD17C180P RQG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 180V 800MW SU... |
| BZD17C120P R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE ZENER 120V 800MW SU... |
| BZD17C75P R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 75V 800MW SUB... |
| BZD17C75P MQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE ZENER 75V 800MW SUB... |
| BZD17C13P RFG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 13V 800MW SUB... |
| BZD17C33P M2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 33V 800MW SUB... |
| BZD17C91P-E3-18 | Vishay Semic... | 0.1 $ | 1000 | DIODE ZENER 800MW SMF DO2... |
| BZD17C12P RVG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 12V 800MW SUB... |
| BZD17C27P RVG | Taiwan Semic... | 0.07 $ | 1000 | DIODE ZENER 27V 800MW SUB... |
| BZD17C120P RVG | Taiwan Semic... | 0.08 $ | 1000 | DIODE ZENER 120V 800MW SU... |
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BZD17C51P M2G Datasheet/PDF