BZG03C47-HM3-08

Diodes - Zener - Single

BZG03C47-HM3-08 refers to a type of Zener diode, which is a device using the reverse-bias breakdown phenomenon to control the voltage across the terminals. The breakdown voltage of the BZG03C47-HM3-08 is 4.8V. It is a single-diode device, meaning that it has only one junction between the quasi-neutral region and the heavily doped region.

Application Field

The BZG03C47-HM3-08 diode is typically used as part of a voltage regulation system. The breakdown voltage of 4.8V is an ideal value for many applications since it is neither too low nor too high of a voltage. Typical applications include battery charging circuits, DC-DC converters, injection-printer drivers, voltage-controlled power supplies, motor speed controllers, and other types of circuit protection systems.

Working Principle

The BZG03C47-HM3-08 diode works by using the phenomenon of reverse-bias breakdown. When the diode is reverse-biased, the electric field across the depletion region becomes more and more intense until a critical level is reached, causing the surface charge carriers to be injected onto the reverse biased junction, thus causing a large current to flow. This breakdown voltage is generally fixed and determined by the junction capacitance and the doping profiles.

When a Zener diode is forward-biased, the voltage across it is less than the breakdown voltage and the diode behaves like an ordinary diode, with a few other effects such as the Zener knee. The Zener knee is a region of negative resistance which occurs when the voltage is lowered below the breakdown voltage. This can be used for voltage regulation in certain applications.

The BZG03C47-HM3-08 diode also exhibits a temperature coefficient, which means that the values of the voltage and current are affected by the temperature. As a result, circuit designers must take into account temperature rise in the diode when designing applications using the device.