Allicdata Part #: | BZG05B24-M3-08-ND |
Manufacturer Part#: |
BZG05B24-M3-08 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 24V 1.25W DO214AC |
More Detail: | Zener Diode 24V 1.25W ±2% Surface Mount DO-214AC (... |
DataSheet: | BZG05B24-M3-08 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.11510 |
Series: | BZG05B-M |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 24V |
Tolerance: | ±2% |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 18V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
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Diodes - Zener - Single: BZG05B24-M3-08 application field and working principle
The BZG05B24-M3-08 is a type of single zener diode, which means it is a semiconductor component with a single p-n junction. These diodes are categorized as zener diodes, meaning there is a reverse breakdown voltage, VZ, at which the current through the junction increases sharply. The zener breakdown voltage for this type of diode is 24 volts.
These diodes are used for various types of electrical applications, the most common of which is to regulate a specific voltage by providing a path to ground for excess voltage.
The BZG05B24-M3-08 is a kind of diode which is constructed in a P type semiconductor environment and its work principle is based on the depletion layer that forms when a positive voltage is applied to the P type semiconductor material. As the voltage increases, the depletion layers get thicker and thicker, until the point where the electric field strength in the depletion layer is higher than the dielectric strength of the semiconductor material. When this happens, the electric field in the depletion layer breaks and electric current is pushed through the diode.
This diode has two distinct working modes. In the forward bias, the depletion layer is really thin and the diode only conducts current when a voltage is applied. In the reverse bias however, the depletion layer is much thicker and the diode can suppress the reverse current up to a certain threshold, which is called the reverse breakdown voltage.
The BZG05B24-M3-08 typically works as a voltage regulator by providing a path to ground for any voltage above its breakdown voltage. By providing a current path, it prevents any further increase in the voltage and limits the voltage to the breakdown voltage. This type of diode is also commonly used for many other applications such as ESD protection, protection of sensitive components from overvoltage, surge suppression, and more.
In conclusion, the BZG05B24-M3-08 is a single zener diode which is used for various types of electrical applications, the most common of which are voltage regulation, ESD protection, and protection from overvoltage. Its work principle is based on the depletion layer which is formed when a positive voltage is applied. This diode has two working modes, forward bias and reverse bias, and can suppress the reverse current up to its breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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