Allicdata Part #: | BZG05B3V6-HM3-08-ND |
Manufacturer Part#: |
BZG05B3V6-HM3-08 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 3.6V 1.25W DO214AC |
More Detail: | Zener Diode 3.6V 1.25W ±1.94% Surface Mount DO-214... |
DataSheet: | BZG05B3V6-HM3-08 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.12086 |
Series: | Automotive, AEC-Q101, BZG05B-M |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.6V |
Tolerance: | ±1.94% |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 20µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
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A BZG05B3V6-HM3-08 diode is a type of single Zener diode manufactured by Vishay, specifically designed for surge and transient overvoltage protection in industrial and automotive applications. It uses the Zener effect to regulate voltage in applications, by providing a stable reference voltage and reducing the difference between input and output voltage levels. This type of diode has low capacitance and series resistance for improved performance, and it is rated for reverse breakdown voltage up to 5.3V.
BZG05B3V6-HM3-08 is designed to provide protection during transient and surge overload conditions, as it has a reverse breakdown voltage of 5.3 V. The required current at that voltage is rated at 8 mA, which is more than sufficient to defend the device and the system against miniature transients. BZG05B3V6-HM3-08 has glass nitride and silicon nitride passivation to provide increased performance and reliability. It is also designed with an optimized junction area, increased reverse power capability and diamond standard junction diode technology for added protection.
The main advantage of BZG05B3V6-HM3-08 over other Zener diodes is that it can be used to protect sensitive electronics from transients and surges, due to its low capacitance and series resistance, which allow high impedance and reliable switch timing. This Zener diode also takes up less board space than an equivalent size MOSFET, making it ideal for applications where space is at a premium. Additionally, the compact size of BZG05B3V6-HM3-08 minimizes power losses and allows for higher speed switching or high frequency signal processing.
The working principle of the BZG05B3V6-HM3-08 Zener diode is based on the Zener Effect. In this phenomena, a reverse voltage is applied to the diode, and when the voltage reaches a certain point, it begins to conduct in reverse, creating a stable reference voltage source. The Zener diode can regulate the output voltage in a wide range of applications, from low voltage circuits to high voltage line protection.
One other feature of BZG05B3V6-HM3-08 is its shock, vibration and moisture resistance, which makes it ideal for use in automotive and industrial applications. Its robust construction and shock protection make it an ideal choice for high-temperature and high-altitude applications. BZG05B3V6-HM3-08 can also be used in telecommunications, security systems and industrial automation, as well as in consumer electronic products.
BZG05B3V6-HM3-08 Zener diodes are designed to provide efficient protection against transient overvoltage conditions, and their low capacitance and series resistance make them suitable for a wide range of voltage protection applications. They are reliable, low-profile, cost-effective and suitable for high-temperature and high-altitude applications.
The specific data is subject to PDF, and the above content is for reference
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