Allicdata Part #: | BZG05C36-HM3-08GITR-ND |
Manufacturer Part#: |
BZG05C36-HM3-08 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 36V 1.25W DO214AC |
More Detail: | Zener Diode 36V 1.25W ±5.56% Surface Mount DO-214A... |
DataSheet: | BZG05C36-HM3-08 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.08454 |
3000 +: | $ 0.07750 |
7500 +: | $ 0.07280 |
10500 +: | $ 0.06810 |
37500 +: | $ 0.06262 |
Series: | Automotive, AEC-Q101, BZG05C-M |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 36V |
Tolerance: | ±5.56% |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 27V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
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Zener diodes are an essential component in creating a voltage-regulated power source. The BZG05C36-HM3-08 Zener diode is no exception. It has a small form factor and is suitable for a wide range of applications, from monitoring relatively low voltages (<4.3V) to high-voltage systems.
This Zener diode typically has a breakdown voltage of 8.2V, but it can range from 6V to 8V. It is able to withstand reverse voltages up to 10V and surges of up to 20V. The maximum allowable power is 1W for continuous operations and 2.2W for peak operations. With a continuous current of up to 200mA, it is designed to handle a variety of power requirements. It can also handle a maximum pulse current of up to 1000mA.
BZG05C36-HM3-08 is usually used in applications such as voltage monitors and overvoltage protection circuits. It can also be used in current-limiting circuits, since it offers excellent temperature stability and low forward voltage drop. Its high power handling capabilities also make it suitable for high-power applications such as voltage regulators, DC-DC converters, and solid-state relays.
The working principle of the BZG05C36-HM3-08 is based on the depletion layer mechanism. When a reverse voltage is applied across the p-n junction, the conduction band electrons in the p-type layer move towards the n-type layer and the valence band holes in the n-type layer move towards the p-type layer. This creates a depletion layer as the electrons and holes combine to neutralize one another’s charge. When the reverse voltage reaches the breakdown voltage, the depletion layer becomes narrower, allowing more current to flow through the diode. This is known as avalanche breakdown and is the basis of the Zener effect.
In conclusion, the BZG05C36-HM3-08 is a reliable Zener diode suitable for a variety of circuit applications. It features a most rated breakdown voltage of 8.2V and can handle reverse voltages up to 10V and surge voltages of up to 20V. It is able to handle high currents of up to 200mA and a maximum power of 2.2W. The working principle of the BZG05C36-HM3-08 is based on the depletion layer mechanism, which makes use of the Zener effect to regulate the voltage in a circuit.
The specific data is subject to PDF, and the above content is for reference
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