Allicdata Part #: | BZG05C39-HE3-TR3-ND |
Manufacturer Part#: |
BZG05C39-HE3-TR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 39V 1.25W DO214AC |
More Detail: | Zener Diode 39V 1.25W ±5% Surface Mount DO-214AC |
DataSheet: | BZG05C39-HE3-TR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 39V |
Tolerance: | ±5% |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 50 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 30V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC |
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The BZG05C39-HE3-TR3 is a high-performance Zener diode typically employed in telecommunications, power supply, and other electronics applications. It is manufactured with a tantalum nitride substrate which makes it an optimal choice for a wide range of operating temperatures. The diode is housed in a hermetically sealed, through-hole package and features an enhanced noise immunity and ESD protection. It is also equipped with an inbuilt thermistor which allows it to be self-regulating and self-protecting, thus enhancing its reliability and efficiency in the intended application.
The BZG05C39-HE3-TR3 is designed to act as a voltage reference, often referred to as “Zener breakdown” in certain circuit designs. Bypassing a low voltage supply with a Zener diode is able to reduce noise peaks and also ensure a steady voltage reference is maintained. Mounted in an integrated circuit structure, the BZG05C39-HE3-TR3 is able to provide the necessary conditions for an optimised and protective environment. Additionally, its low leakage current capability and integrated ESD protection ensure that its voltage capabilities remain reliable and safe no matter the operating conditions.
The working principle of the BZG05C39-HE3-TR3 is based on Zener breakdown of diodes. A breakdown voltage is the point at which the diode enters reverse breakdown and conducts current in the reverse direction. This process can take place either naturally or thermally in a diode. A Zener diode, however, is designed to breakdown at a predetermined voltage, allowing for robust signal control and regulation. The voltage at which the breakdown of a Zener diode occurs is known as its Zener voltage. The Zener voltage is determined by the parameters of the diode, including its breakdown voltage, temperature coefficient, and current rating.
In comparison to other types of diodes, a Zener diode requires significantly less voltage to begin a breakdown process. This property makes it an ideal choice for its primary application as a voltage reference. This is because it can be used to convert an input voltage with minor voltage drops. Additionally, its reverse current capability is exceptionally low due to its high breakdown voltage quality. This enables a longer lifespan and higher levels of reliability.
So, in summary, the BZG05C39-HE3-TR3 is a single Zener diode that is used for telecommunications, power supply, and other electronics applications. Its integrated thermistor makes it ideal for a range of operating temperatures. It acts as a voltage reference by allowing reverse breakdown at a predetermined voltage for signal control and regulation. It also has an extremely low reverse current capability with a long lifespan and higher levels of reliability. Finally, its tantalum nitride substrate ensures that it has the necessary protection for an optimised and protective environment.
The specific data is subject to PDF, and the above content is for reference
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