Allicdata Part #: | BZG05C56-E3-TR3-ND |
Manufacturer Part#: |
BZG05C56-E3-TR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 56V 1.25W DO214AC |
More Detail: | Zener Diode 56V 1.25W ±5% Surface Mount DO-214AC |
DataSheet: | BZG05C56-E3-TR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 56V |
Tolerance: | ±5% |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 120 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 43V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC |
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Diodes, specifically Zener diodes, are used in electrical engineering and electronics to limit the current running through them to a specific value and protect the circuit from potential power spikes. The BZG05C56-E3-TR3 is a single Zener diode semiconductor device designed to handle power surges and regulate power distribution in a circuit.
This device is a single Zener diode with a peak reverse voltage rating of 56 V, meaning it can handle power surges up to 56 V. The maximum power dissipation of the device is 500 mW with a maximum reverse current rating of 1mA. The breakdown voltage of the BZG05C56-E3-TR3 is 5.6 V, and its minimum Zener voltage is 5.4 V.
The BZG05C56-E3-TR3 device has wide ranging applications in electrical power control and distribution systems. It is commonly used in regulating and stabilizing the voltage in communication circuits, power supplies, high voltage transistors, and AC adapters. The device is also popularly used in high voltage circuits as a protection diode against voltage spikes and shorts, and combines two functions - that of a Zener diode for regulation, and as a normal diode when it is operated in the reverse bias condition.
The main specification of the BZG05C56-E3-TR3 device is its breakdown voltage, or the voltage to be applied before the device reaches its breakdown point. When the voltage exceeds the breakdown voltage, current will flow through the junction and the device will be damaged. If the breakdown voltage is exceeded, the device is said to be in a state of zener breakdown, the reverse current flow increases until the Zener diode is destroyed. To protect the device from this damage, its maximum breakdown voltage must be below the maximum rated voltage of the device.
The BZG05C56-E3-TR3 also performs well in low voltage differential circuits. Its low capacitance and high isolation voltage allow it to be used in low voltage differential circuits, as well as in high speed data transmission applications. It is also suitable for use in high temperature and high pressure environments, and is one of the most popular options for industrial use.
To ensure the safety and reliability of operation of the BZG05C56-E3-TR3, the device must be isolated from current carrying components. This ensures that it does not interfere with operation of the circuit by dissipating too much heat, or by not being properly isolated from other components. This can be achieved by using insulating material such as air, mica, or epoxy.
In conclusion, the BZG05C56-E3-TR3 device is a versatile single Zener diode semiconductor device used in power regulation and control systems. It is useful in applications such as power supplies, communication circuits, high voltage power transistors, and AC adapters. The device is robust in high temperature and pressure environments, and can be isolated to ensure proper protection from current carrying components. Its low capacitance and high isolation voltage make it a viable option for low voltage differential circuit applications, making it a popular choice for industrial use.
The specific data is subject to PDF, and the above content is for reference
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