BZS55C33 RXG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	33V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	80 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 24V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 10mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	1206 (3216 Metric)
Supplier Device Package:	1206

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The BZS55C33 RXG is a single Zener diode typically used as a voltage regulator in many applications. It is known for its efficient performance, with a reverse breakdown voltage of 33V, and a peak repetitive reverse power dissipation rating of 1.5W at 25°C. In addition, this part has a low noise figure, making it suitable for thin-film type circuits.The BZS55C33 RXG’s main application field is voltage regulation. It is commonly used to provide a consistent source of power for electronic devices and circuits on various power supplies. Its high forward voltage drop, low forward current, and reverse breakdown voltage makes it the ideal choice for providing protection from short circuits and voltage spikes.Aside from voltage regulation, the BZS55C33 RXG is also commonly used to provide overcurrent protection, as it can be used in conjunction with a current-sensing resistor to limit current draw in circuits. This component is also used for low-voltage drop Zener voltage regulation, where a typical resistor-divider configuration is used in conjunction with the component to monitor circuit performance and make adjustments when needed.Due to its robust design and its reverse breakdown voltage, the BZS55C33 RXG is also useful in automotive and industrial applications. It is most commonly used as a reset switch in these applications, as its strong reverse breakdown voltage allows it to provide a steady output voltage even when the supply voltage fluctuations.On a technical level, the BZS55C33 RXG is a P-N junction diode made from silicon material. When used as a voltage regulator, it operates by converging a P-type and an N-type semiconductor material in a single component. The cause of the voltage regulation is the zener breakdown or avalanche breakdown phenomenon.When an electric potential is applied to the diode, electrons move towards the P-type material and holes move towards the N-type material. This movement of electrons and holes creates an electric field that increases the potential until it reaches the zener breakdown voltage. At this point, the electric field becomes so strong that it causes a continuous avalanche of carriers, creating an electric current that is used to regulate the output voltage.The zener breakdown voltage is directly proportional to the amount of reverse current that flows through the diode, which is why the BZS55C33 RXG is well-suited for applications such as voltage regulation and overcurrent protection.The BZS55C33 RXG is a versatile single Zener diode well-suited for a wide range of applications. Its efficient performance, reverse breakdown voltage, and peak repetitive reverse power dissipation rating make it an ideal choice for protecting electronic devices and circuits from short circuits and voltage spikes, as well as providing steady output voltage in automotive and industrial applications.

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