Allicdata Part #: | BZT52C11S-TPMSTR-ND |
Manufacturer Part#: |
BZT52C11S-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 11V 200MW SOD323 |
More Detail: | Zener Diode 11V 200mW ±5% Surface Mount SOD-323 |
DataSheet: | BZT52C11S-TP Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03043 |
6000 +: | $ 0.02646 |
15000 +: | $ 0.02249 |
30000 +: | $ 0.02117 |
75000 +: | $ 0.01985 |
150000 +: | $ 0.01764 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | ±5% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 20 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | BZT52C11 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZT52C11S-TP is a single zener diode in the SOT-23 (SC-88) miniature surface mount package that has a wide range of applications. It is used primarily for switching and signal processing, including voltage regulation, voltage switching, and noise suppression. Additionally, it can also be used in various other applications that require stable voltage regulation.
The BZT52C11S-TP diode is made up of a P-type semiconductor material, which is heavily doped with an acceptor level to form a reverse-biased, low voltage junction. When a current passes through this junction, a highly resistive barrier is created that limits the current and prevents further increase. This prevents the voltage across the junction from rising too high, thus regulating the voltage.
The BZT52C11S-TP has a high peak forward surge current and a high peak reverse surge current. The peak forward surge current is the maximum amount of current that can safely flow through the diode when it is forward-biased. The peak reverse surge current is the maximum amount of current that can safely flow through the diode when reverse-biased. These two features make the BZT52C11S-TP especially suitable for transient and surge protection applications.
Another important feature of the BZT52C11S-TP is its low reverse leakage current. This translates to a low power dissipation, which is beneficial in applications with limited power sources. Additionally, this low power dissipation also helps to reduce the risk of thermal runaway or short-circuits caused by excessive power dissipation.
The BZT52C11S-TP also has excellent noise suppression capabilities. This is due to its low-noise characteristic and its ability to effectively reduce noise interference in circuits. Since noise interference can lead to false triggers, this ability can help to improve circuit reliability and overall system performance.
The BZT52C11S-TP diode is also capable of handling higher temperatures, making it suitable for high-temperature applications. It also has excellent aging characteristics; it remains stable over time despite operating in extreme temperatures. Furthermore, it has a long service life and does not degrade easily.
The BZT52C11S-TP diode can be used in a variety of applications, including voltage regulation, noise suppression, and current limiting. As one of the most popular single zener diodes on the market today, it has proven to be a reliable, efficient, and cost-effective solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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