BZT52C10S-7

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The BZT52C10S-7 is a single zener diode in the SOD-123F package. This diode is a high-reliability component that is specially designed for use in critical applications. It is able to withstand high power and high temperature. The BZT52C10S-7 diode is a high-precision component that provides exceptional frequency control and reverse voltage protection.

The BZT52C10S-7 has a maximum reverse voltage of 7 volts. It has a maximum power dissipation of 500mW and maximum operating temperature of 150°C. It has an extremely sharp reverse leakage current of 0.1uA at 77°F. The BZT52C10S-7 is capable of withstanding extremely high transient surges.

The working principle of BZT52C10S-7 is based on the process of the breakdown of the depletion region under the direct zener effect. It has a reverse biased P-N junction which forces the majority carriers from the N-type material to the P-type material. This process creates a high potential along the junction and in turn, a large electric field. This electric field breaks down the depletion region, creating a large current. The forward voltage across the junction remains constant even when the current changes, due to the effect of the electric field.

The BZT52C10S-7 is used in several different applications such as voltage regulation, protection against reverse currents, and surge protection. Its high reliability and performance make it an ideal choice for many power electronic systems. It can also be used in voltage reference circuits, voltage multipliers and bridge rectifiers. It is also used to protect sensitive electronics from over-voltage damage.

The BZT52C10S-7 is a reliable and high-performance zener diode that provides superior protection from reverse currents and over-voltage transients. Its sharp current characteristics and low reverse leakage current make it ideal for protection of sensitive electronics. It is also capable of withstanding high power and temperature. The working principle of the BZT52C10S-7 predicates on the breakdown of the depletion region under the direct zener effect, and is the basis for its excellent performance.

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