BZT52C15-7-F Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	15V
Tolerance:	±6%
Power - Max:	500mW
Impedance (Max) (Zzt):	30 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 10.5V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SOD-123
Supplier Device Package:	SOD-123
Base Part Number:	BZT52C15

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Diodes - Zener - Single: BZT52C15-7-F Application Field and Working Principle

Zener diodes are special types of diodes that are designed to be used in reverse bias, and are ideal for applications limited in available power. They are named after the inventor of the device, Clarence Zener, and they are commonly used in a variety of applications from power regulation to signal generation. The BZT52C15-7-F Zener diode is an example of a single Zener diode that provides excellent reverse bias performance. In this article, we will take a look at the BZT52C15-7-F and its application field and working principle.The BZT52C15-7-F is a glass passivated, very low voltage Zener diode designed to provide a precise, highly accurate voltage reference and excellent reverse bias performance. It has a maximum reverse working voltage of 15V, with a nominal Zener voltage of 7.0V and a maximum Zener voltage of 7.6V. It also has a maximum power dissipation of 200mW, a maximum operating temperature range of -50 to +105, and a thermal resistance of 10 degree Celsius per Watt.The BZT52C15-7-F is commonly used in a variety of applications for voltage regulation and waveform shaping. In voltage regulation applications, the BZT52C15-7-F can be used in series with a resistor to create a simple voltage regulator circuit. In waveform shaping applications, the Zener diode can be used to shape waveforms, providing improved signal waveforms and improving the accuracy of measurements.The BZT52C15-7-F is based on the reverse bias principle, which states that when the voltage applied to a PN junction device is reversed, the flow of current is restricted to a low level, depending on the specific characteristics of the device. A reverse-biased PN junction device such as the BZT52C15-7-F will limit and reduce the voltage applied to it. When the voltage is reduced, the energy stored in the device is dissipated as heat, which is why the BZT52C15-7-F has a maximum power dissipation rating.In addition to the reverse bias principle, the BZT52C15-7-F also makes use of avalanche breakdown. This phenomenon occurs when the voltage applied to the device is increased beyond its breakdown voltage, which causes the current to increase exponentially, resulting in dissipating larger amounts of heat. This effect can be valuable in situations where a steady voltage is needed and higher currents might be encountered.The BZT52C15-7-F has many potential applications in the field of electronics due to its benefits as a low-voltage, low-power, highly accurate voltage reference device. It can be used in series with a resistor to create a simple voltage regulator, or in waveform-shaping circuits to improve signal integrity. It is also capable of handling higher currents due to the inherent avalanche breakdown effect at the device. All of these attributes make the BZT52C15-7-F an ideal choice for many electronic system designs.

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