BZT52C18-13

The BZT52C18-13 is a Zener diode single type transistor. It features a do-35 package size and a nominal voltage of 18V. When it comes to electrical parameters for this type of transistor, the breakdown voltage is at 18V and maximum reverse power dissipation is 500mW. The maximum reverse current is at 5mW and frequency voltage coefficient is 0.03V/Mhz. The temperature coefficient is at 3mV/C and storage temperature is -55C to +150C.

This transistor is commonly used in different application fields that are involved with voltage regulation, clipping and clamping circuits, reference sources, and waveform generation. Not only is it pivotal in the development of voltage stabilizing systems, but it is also integral to regulating an electrical current passing through a device. It is also used as a voltage reference in circuits, as well as a source of bias and balance.

Working principles for this type of transistor involve the flow of minority carriers due to reverse bias voltage injections. As the reverse voltage increases, the current caused by thermally generated minority carriers also increases. This continuing flow eventually reaches the point of avalanche breakdown. The avalanche breakdown occurs when the increased electric field strength has pushed the electrons that are pushed into holes. This then causes a sharp increase in the current.

When the current has reached the saturation point, it then creates the Zener breakdown which phenomenon which produces a decrease in the voltage across the transistor. Even after the current has reached the avalanche breakdown point and the Zener breakdown has occurred, the current and voltage remain constant. This is what allows it to be perfect for regulating electric current, being a source of bias and balance, and reference sources.