BZT52C2V4LP-7

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The BZT52C2V4LP-7 is a versatile and robust zinc oxide-based Zener single-diode designed by NXP Semiconductors. Zener diodes are widely used in a variety of applications that require a controlled breakdown state, such as voltage clamping, signal conditioning, voltage regulation, and many others. As a zinc oxide-based device, the BZT52C2V4LP-7 has excellent reverse recovery characteristics, enabling it to be used both in large signal applications and as a voltage regulator.The BZT52C2V4LP-7 can be used across a wide range of applications. It is often used in telecoms, computers, and consumer electronics for pulse shaping and signal conditioning, as well as voltage regulation and power management. It is well suited for many applications due to its high peak power and excellent surge withstand capability. It can also be used in automotive and industrial applications, where its zinc oxide design makes it suitable for low EMI (electromagnetic interference) designs. The BZT52C2V4LP-7 is a 500 mW Zener diode with an operating voltage range of -5 V to -43 V and a maximum reverse peak current of 2.5 A. The reverse quasi-signal voltage is typically 4.2 V at currents of 0.1 A and higher. The reverse pulse power rating of 50 W peaks indicates its capability for handling large surges and spikes of current during operation. In addition to its excellent surge withstand capability, the BZT52C2V4LP-7 provides low forward voltage drop, fast switching capability and excellent temperature stability. It is rated for operation from -65°C to +175°C. It is also designed with a noise immunity of 60dB at 50MHz, making it suitable for use in noisy environment. The BZT52C2V4LP-7 functions by limiting the amount of current flowing through it to a specific value when voltage is applied to it. By regulating the flow of current, it can protect components and circuits against damage caused by over-voltage or over-current. As such, it is oftentimes used in applications to ensure that the correct amount of current is being fed to other components, or as a voltage or current regulator.The working principle of the BZT52C2V4LP-7 is based on the Zener breakdown effect. When the voltage applied to the diode exceeds the breakdown voltage, electrons are forced across the depletion region, producing what is known as a Zener breakdown. This effect can be seen when the diode is reversed-biased and exposed to high reverse-voltage. In operation, the Zener Breakdown effect ensures that the forward and reverse current has a limited peak and is not allowed to become too large. The BZT52C2V4LP-7 is a highly versatile and reliable Zener single diode that is suitable for a wide range of applications. Its zinc oxide design provides excellent surge and reverse recovery characteristics, making it suitable for large peak power applications and voltage regulation. Its fast switching capability and low-noise operation make it suitable for use in noisy environments, while its wide operating range and temperature stability ensure reliable performance in a variety of conditions.

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