
Allicdata Part #: | BZT52C39LP-7B-ND |
Manufacturer Part#: |
BZT52C39LP-7B |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER 39V X1-DFN1006-2 |
More Detail: | Zener Diode 39V 250mW ±5.13% Surface Mount X1-DFN1... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.03387 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 39V |
Tolerance: | ±5.13% |
Power - Max: | 250mW |
Impedance (Max) (Zzt): | 130 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 27.3V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 0402 (1006 Metric) |
Supplier Device Package: | X1-DFN1006-2 |
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The BZT52C39LP-7B diode is classified as a Single Zener diode. The primary application field for this diode is as a low-power Zener voltage regulator, due to its ability to both conduct a current while maintaining a steady voltage across its terminals. This ability is made possible by its working principle, which involves the use of a special junction in order to modify the properties of a semiconductor material, creating distinct characteristics in electrons and holes.
The key component of the BZT52C39LP-7B diode is a special junction between two regions of doped semiconductor material, which is known as a P-N junction. As the positive and negative charge carriers are pushed away from each other, a layer of depletion region is formed between them. This layer acts as an insulating barrier, preventing further current flow. When a forward bias is applied across the diode, the barrier is weakened, allowing an electric current to flow through the junction. As the current increases, so does the voltage drop across the diode. At a certain point, this voltage reach a steady state and remains constant, even as the current increases.
When the bias voltage is reversed, the depletion region grows wider and prevents any further current flow. This is known as the breakdown voltage and is typically a fixed value for specific types of semiconductors. For the BZT52C39LP-7B diode, this breakdown voltage is 5.6V. This means that any voltage that exceeds 5.6V will cause the diode to conduct a current, while maintaining a constant 5.6V across its terminals. This makes the BZT52C39LP-7B an ideal low-power Zener voltage regulator.
In addition to its use as a voltage regulator, the BZT52C39LP-7B diode can also be used for sensing temperature, due to its relatively small temperature coefficient. The diode can be reverse-biased and connected to a voltage divider and thermistor, which acts as a temperature sensor. As the temperature of the environment changes, the resistance of the thermistor will also change, affecting the output voltage of the voltage divider, which in turn can be used to detect the ambient temperature.
In conclusion, the BZT52C39LP-7B diode is a Single Zener diode, whose primary application field is as a low-power Zener voltage regulator. Its working principle involves the use of a special junction between two regions of doped semiconductor material, which allows it to maintain a steady voltage across its terminals, even as the current increases. It can also be used for sensing temperature, due to its relatively small temperature coefficient. This makes the BZT52C39LP-7B diode an ideal choice for various applications.
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